Magnetic noise evolution in CoFeB/MgO/CoFeB tunnel junctions during annealing

Ryan Stearrett; W. G. Wang; L. R. Shah; J. Q. Xiao; E. R. Nowak

doi:10.1063/1.3526721

Magnetic noise evolution in CoFeB/MgO/CoFeB tunnel junctions during annealing

Ryan Stearrett, W. G. Wang, L. R. Shah, J. Q. Xiao, E. R. Nowak

Physics

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

We report on the evolution of equilibrium magnetoresistive (MR) 1/f noise due to the exchange-biased magnetic layer in MgO-based magnetic tunnel junctions as a function of annealing time at 380 and 430 °C. The resistance susceptibility and MR noise are observed to increase rapidly with annealing time at a fixed temperature. The magnetic losses responsible for MR noise are not significantly affected by the structural crystallization at the CoFeB/MgO interface during short annealing times. After prolonged annealing, the decrease in magnetic losses is attributed to reduced disorder in the magnetic layers that result in thermally driven fluctuations in local micromagnetic structure.

Original language	English (US)
Article number	243502
Journal	Applied Physics Letters
Volume	97
Issue number	24
DOIs	https://doi.org/10.1063/1.3526721
State	Published - Dec 13 2010

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Magnetic noise evolution in CoFeB/MgO/CoFeB tunnel junctions during annealing",

abstract = "We report on the evolution of equilibrium magnetoresistive (MR) 1/f noise due to the exchange-biased magnetic layer in MgO-based magnetic tunnel junctions as a function of annealing time at 380 and 430 °C. The resistance susceptibility and MR noise are observed to increase rapidly with annealing time at a fixed temperature. The magnetic losses responsible for MR noise are not significantly affected by the structural crystallization at the CoFeB/MgO interface during short annealing times. After prolonged annealing, the decrease in magnetic losses is attributed to reduced disorder in the magnetic layers that result in thermally driven fluctuations in local micromagnetic structure.",

author = "Ryan Stearrett and Wang, {W. G.} and Shah, {L. R.} and Xiao, {J. Q.} and Nowak, {E. R.}",

note = "Funding Information: This work was supported by the DOE under Award No. DE-FG02-07ER46374.",

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AU - Xiao, J. Q.

AU - Nowak, E. R.

N1 - Funding Information: This work was supported by the DOE under Award No. DE-FG02-07ER46374.

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N2 - We report on the evolution of equilibrium magnetoresistive (MR) 1/f noise due to the exchange-biased magnetic layer in MgO-based magnetic tunnel junctions as a function of annealing time at 380 and 430 °C. The resistance susceptibility and MR noise are observed to increase rapidly with annealing time at a fixed temperature. The magnetic losses responsible for MR noise are not significantly affected by the structural crystallization at the CoFeB/MgO interface during short annealing times. After prolonged annealing, the decrease in magnetic losses is attributed to reduced disorder in the magnetic layers that result in thermally driven fluctuations in local micromagnetic structure.

AB - We report on the evolution of equilibrium magnetoresistive (MR) 1/f noise due to the exchange-biased magnetic layer in MgO-based magnetic tunnel junctions as a function of annealing time at 380 and 430 °C. The resistance susceptibility and MR noise are observed to increase rapidly with annealing time at a fixed temperature. The magnetic losses responsible for MR noise are not significantly affected by the structural crystallization at the CoFeB/MgO interface during short annealing times. After prolonged annealing, the decrease in magnetic losses is attributed to reduced disorder in the magnetic layers that result in thermally driven fluctuations in local micromagnetic structure.

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Magnetic noise evolution in CoFeB/MgO/CoFeB tunnel junctions during annealing

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