Low-Threshold Operation of GaAs-Based (GaIn)As/Ga(AsSb)/(GaIn)As "w"-Quantum Well Lasers Emitting at 1.3 μm

C. Fuchs, P. Ludewig, A. Bruggemann, A. Ruiz Perez, M. J. Weseloh, S. Reinhard, Jorg Hader, Jerome V Moloney, A. Baumner, Stephan W Koch, W. Stolz

Research output: Chapter in Book/Report/Conference proceedingConference contribution


The maturity of GaAs/AlAs-based technology enabled the fabrication of highly efficient diode lasers based on (AlGaIn)As/GaAs as well as (AlGa)As/GaAs active regions. Furthermore, these material systems have proven to be widely adaptable, because the GaAs/AlAs system allows for the fabrication of various cavity concepts including in-plane as well as vertically emitting laser structures and the emission wavelengths of the above-mentioned active regions can be tailored from the red to the near-infrared wavelength regime. However, the fabrication of GaAs-based telecommunication lasers proved to be difficult due to the high quality requirements in combination with strain-induced defect formation. While the demonstration of 1.3 μm lasers based on Ga(AsSb)/GaAs [1] as well as (GaIn)(NAs)/GaAs [2] was possible, (GaIn)(AsP)/InP and (AlGaIn)As/InP remained the dominant material systems for lasers emitting at wavelengths longer than 1.2 μm.

Original languageEnglish (US)
Title of host publication26th International Semiconductor Laser Conference, ISLC 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages2
ISBN (Electronic)9781538664865
StatePublished - Oct 30 2018
Event26th International Semiconductor Laser Conference, ISLC 2018 - Santa Fe, United States
Duration: Sep 16 2018Sep 19 2018

Publication series

NameConference Digest - IEEE International Semiconductor Laser Conference
ISSN (Print)0899-9406


Other26th International Semiconductor Laser Conference, ISLC 2018
Country/TerritoryUnited States
CitySanta Fe

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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