@inproceedings{b5798ba8d27b40e3b41feeef91250865,
title = "Low-Threshold Operation of GaAs-Based (GaIn)As/Ga(AsSb)/(GaIn)As {"}w{"}-Quantum Well Lasers Emitting at 1.3 μm",
abstract = "The maturity of GaAs/AlAs-based technology enabled the fabrication of highly efficient diode lasers based on (AlGaIn)As/GaAs as well as (AlGa)As/GaAs active regions. Furthermore, these material systems have proven to be widely adaptable, because the GaAs/AlAs system allows for the fabrication of various cavity concepts including in-plane as well as vertically emitting laser structures and the emission wavelengths of the above-mentioned active regions can be tailored from the red to the near-infrared wavelength regime. However, the fabrication of GaAs-based telecommunication lasers proved to be difficult due to the high quality requirements in combination with strain-induced defect formation. While the demonstration of 1.3 μm lasers based on Ga(AsSb)/GaAs [1] as well as (GaIn)(NAs)/GaAs [2] was possible, (GaIn)(AsP)/InP and (AlGaIn)As/InP remained the dominant material systems for lasers emitting at wavelengths longer than 1.2 μm.",
author = "C. Fuchs and P. Ludewig and A. Bruggemann and Perez, {A. Ruiz} and Weseloh, {M. J.} and S. Reinhard and Jorg Hader and Moloney, {Jerome V} and A. Baumner and Koch, {Stephan W} and W. Stolz",
note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 26th International Semiconductor Laser Conference, ISLC 2018 ; Conference date: 16-09-2018 Through 19-09-2018",
year = "2018",
month = oct,
day = "30",
doi = "10.1109/ISLC.2018.8516246",
language = "English (US)",
series = "Conference Digest - IEEE International Semiconductor Laser Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "221--222",
booktitle = "26th International Semiconductor Laser Conference, ISLC 2018",
}