Low-threshold high-speed 1·55 µm vapour phase transported buried heterostructure lasers (VPTBH)

T. L. Koch; L. A. Coldren; T. J. Bridges; E. G. Burkhardt; P. J. Corvini; B. I. Miller; D. P. Wilt

doi:10.1049/el:19840581

Low-threshold high-speed 1·55 µm vapour phase transported buried heterostructure lasers (VPTBH)

T. L. Koch
, L. A. Coldren
, T. J. Bridges
, E. G. Burkhardt
, P. J. Corvini
, B. I. Miller
, D. P. Wilt

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

A new 1.55 fim InGaAsP buried heterostructure laser has been fabricated using a hydride vapour phase epitaxial regrowth technique. Thresholds as low as 15 mA have been obtained. In addition, improved high-frequency modulation characteristics have been observed resulting from the lowdoped VPE transported material, with 3 dB detected bandwidths out to ~4.5 GHz.

Original language	English (US)
Pages (from-to)	856-857
Number of pages	2
Journal	Electronics Letters
Volume	20
Issue number	21
DOIs	https://doi.org/10.1049/el:19840581
State	Published - Oct 11 1984
Externally published	Yes

Keywords

Lasers and laser applications

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19840581

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title = "Low-threshold high-speed 1·55 µm vapour phase transported buried heterostructure lasers (VPTBH)",

abstract = "A new 1.55 fim InGaAsP buried heterostructure laser has been fabricated using a hydride vapour phase epitaxial regrowth technique. Thresholds as low as 15 mA have been obtained. In addition, improved high-frequency modulation characteristics have been observed resulting from the lowdoped VPE transported material, with 3 dB detected bandwidths out to \textasciitilde{}4.5 GHz.",

keywords = "Lasers and laser applications",

author = "Koch, \{T. L.\} and Coldren, \{L. A.\} and Bridges, \{T. J.\} and Burkhardt, \{E. G.\} and Corvini, \{P. J.\} and Miller, \{B. I.\} and Wilt, \{D. P.\}",

year = "1984",

month = oct,

day = "11",

doi = "10.1049/el:19840581",

language = "English (US)",

volume = "20",

pages = "856--857",

journal = "Electronics Letters",

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publisher = "John Wiley \& Sons Inc.",

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TY - JOUR

T1 - Low-threshold high-speed 1·55 µm vapour phase transported buried heterostructure lasers (VPTBH)

AU - Koch, T. L.

AU - Coldren, L. A.

AU - Bridges, T. J.

AU - Burkhardt, E. G.

AU - Corvini, P. J.

AU - Miller, B. I.

AU - Wilt, D. P.

PY - 1984/10/11

Y1 - 1984/10/11

N2 - A new 1.55 fim InGaAsP buried heterostructure laser has been fabricated using a hydride vapour phase epitaxial regrowth technique. Thresholds as low as 15 mA have been obtained. In addition, improved high-frequency modulation characteristics have been observed resulting from the lowdoped VPE transported material, with 3 dB detected bandwidths out to ~4.5 GHz.

AB - A new 1.55 fim InGaAsP buried heterostructure laser has been fabricated using a hydride vapour phase epitaxial regrowth technique. Thresholds as low as 15 mA have been obtained. In addition, improved high-frequency modulation characteristics have been observed resulting from the lowdoped VPE transported material, with 3 dB detected bandwidths out to ~4.5 GHz.

KW - Lasers and laser applications

UR - https://www.scopus.com/pages/publications/0021510316

UR - https://www.scopus.com/pages/publications/0021510316#tab=citedBy

U2 - 10.1049/el:19840581

DO - 10.1049/el:19840581

M3 - Article

AN - SCOPUS:0021510316

SN - 0013-5194

VL - 20

SP - 856

EP - 857

JO - Electronics Letters

JF - Electronics Letters

IS - 21

ER -

Low-threshold high-speed 1·55 µm vapour phase transported buried heterostructure lasers (VPTBH)

Abstract

Keywords

ASJC Scopus subject areas

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