A new 1.55 fim InGaAsP buried heterostructure laser has been fabricated using a hydride vapour phase epitaxial regrowth technique. Thresholds as low as 15 mA have been obtained. In addition, improved high-frequency modulation characteristics have been observed resulting from the lowdoped VPE transported material, with 3 dB detected bandwidths out to ~4.5 GHz.
- Lasers and laser applications
ASJC Scopus subject areas
- Electrical and Electronic Engineering