Low-threshold high-speed 1·55 µm vapour phase transported buried heterostructure lasers (VPTBH)

T. L. Koch; L. A. Coldren; T. J. Bridges; E. G. Burkhardt; P. J. Corvini; B. I. Miller; D. P. Wilt

doi:10.1049/el:19840581

Low-threshold high-speed 1·55 µm vapour phase transported buried heterostructure lasers (VPTBH)

T. L. Koch, L. A. Coldren, T. J. Bridges, E. G. Burkhardt, P. J. Corvini, B. I. Miller, D. P. Wilt

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

A new 1.55 fim InGaAsP buried heterostructure laser has been fabricated using a hydride vapour phase epitaxial regrowth technique. Thresholds as low as 15 mA have been obtained. In addition, improved high-frequency modulation characteristics have been observed resulting from the lowdoped VPE transported material, with 3 dB detected bandwidths out to ~4.5 GHz.

Original language	English (US)
Pages (from-to)	856-857
Number of pages	2
Journal	Electronics Letters
Volume	20
Issue number	21
DOIs	https://doi.org/10.1049/el:19840581
State	Published - Oct 11 1984
Externally published	Yes

Keywords

Lasers and laser applications

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19840581

Cite this

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title = "Low-threshold high-speed 1·55 µm vapour phase transported buried heterostructure lasers (VPTBH)",

abstract = "A new 1.55 fim InGaAsP buried heterostructure laser has been fabricated using a hydride vapour phase epitaxial regrowth technique. Thresholds as low as 15 mA have been obtained. In addition, improved high-frequency modulation characteristics have been observed resulting from the lowdoped VPE transported material, with 3 dB detected bandwidths out to ~4.5 GHz.",

keywords = "Lasers and laser applications",

author = "Koch, {T. L.} and Coldren, {L. A.} and Bridges, {T. J.} and Burkhardt, {E. G.} and Corvini, {P. J.} and Miller, {B. I.} and Wilt, {D. P.}",

year = "1984",

month = oct,

day = "11",

doi = "10.1049/el:19840581",

language = "English (US)",

volume = "20",

pages = "856--857",

journal = "Electronics Letters",

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publisher = "John Wiley & Sons Inc.",

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T1 - Low-threshold high-speed 1·55 µm vapour phase transported buried heterostructure lasers (VPTBH)

AU - Koch, T. L.

AU - Coldren, L. A.

AU - Bridges, T. J.

AU - Burkhardt, E. G.

AU - Corvini, P. J.

AU - Miller, B. I.

AU - Wilt, D. P.

PY - 1984/10/11

Y1 - 1984/10/11

N2 - A new 1.55 fim InGaAsP buried heterostructure laser has been fabricated using a hydride vapour phase epitaxial regrowth technique. Thresholds as low as 15 mA have been obtained. In addition, improved high-frequency modulation characteristics have been observed resulting from the lowdoped VPE transported material, with 3 dB detected bandwidths out to ~4.5 GHz.

AB - A new 1.55 fim InGaAsP buried heterostructure laser has been fabricated using a hydride vapour phase epitaxial regrowth technique. Thresholds as low as 15 mA have been obtained. In addition, improved high-frequency modulation characteristics have been observed resulting from the lowdoped VPE transported material, with 3 dB detected bandwidths out to ~4.5 GHz.

KW - Lasers and laser applications

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U2 - 10.1049/el:19840581

DO - 10.1049/el:19840581

M3 - Article

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JO - Electronics Letters

JF - Electronics Letters

IS - 21

ER -

Low-threshold high-speed 1·55 µm vapour phase transported buried heterostructure lasers (VPTBH)

Abstract

Keywords

ASJC Scopus subject areas

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