Abstract
Monolithic tunable electromagnetic crystal (EMXT) surfaces based on semiconductor varactors has been designed and fabricated for various microwave and millimeter wave applications. In order to tackle the problem of high losses associated with this kind of tunable EMXT structures, a high-quality planar air-bridged GaAs Schottky (PAS) diode process has been developed and incorporated to produce low-loss monolithic tunable EMXT surfaces. Finite-element model indicates that analog waveguide phase shifter with EMXT sidewalls can achieve 360° phase shift with less than 3 dB insertion loss. A backside-biasing scheme utilizing through substrate vias has also been developed. Preliminary EMXT reflection measurements show lower loss comparing with previously demonstrated tunable EMXTs. Because of the high cut-off frequency (above THz) of the GaAs Schottky diode, this EMXT technology may be readily extended to higher frequencies applications such as W-Band ESA.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 435-438 |
| Number of pages | 4 |
| Journal | IEEE Antennas and Propagation Society, AP-S International Symposium (Digest) |
| Volume | 2 |
| State | Published - 2003 |
| Externally published | Yes |
| Event | 2003 IEEE International Antennas and Propagation Symposium and USNC/CNC/URSI North American Radio Science Meeting - Columbus, OH, United States Duration: Jun 22 2003 → Jun 27 2003 |
Keywords
- Electromagnetic crystal
- Phase shifter
- Schottky diode
ASJC Scopus subject areas
- Electrical and Electronic Engineering