Abstract
We present a lithography-free technique for fabrication of clean, high quality graphene devices. This technique is based on evaporation through hard Si shadow masks, and eliminates contaminants introduced by lithographical processes. We demonstrate that devices fabricated by this technique have significantly higher mobility values than those obtained by standard electron beam lithography. To obtain ultra-high mobility devices, we extend this technique to fabricate suspended graphene samples with mobilities as high as 120 000 cm2/(V·s).
Original language | English (US) |
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Pages (from-to) | 98-102 |
Number of pages | 5 |
Journal | Nano Research |
Volume | 3 |
Issue number | 2 |
DOIs | |
State | Published - Feb 2010 |
Externally published | Yes |
Keywords
- Lithography-free
- Mobility
- Shadow mask
- Suspended graphene
- e-beam evaporation
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- General Materials Science
- Condensed Matter Physics
- Electrical and Electronic Engineering