Linewidth enhancement factor and optical gain in (GaIn)(NAs)/GaAs lasers

N. C. Gerhardt; M. R. Hofmann; J. Hader; J. V. Moloney; S. W. Koch; H. Riechert

doi:10.1063/1.1638628

Linewidth enhancement factor and optical gain in (GaIn)(NAs)/GaAs lasers

N. C. Gerhardt
, M. R. Hofmann
, J. Hader
, J. V. Moloney
, S. W. Koch
, H. Riechert

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

Measurements and microscopic calculations of the α-factor in (GaIn)(NAs) quantum well lasers were discussed. Data was obtained from the shift of the Fabry-Perot modes with injection current was used to eliminate temperature-dependent artifacts. The molecular beam epitaxy was grown 350 μm long ridge-waveguide laser structure for the experiment. It was found that the value of α at the laser emission wavelength in this structure is around 2.5 +/-0.4 and remains constant with carrier density variations for a fixed emission wavelength.

Original language	English (US)
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	1
DOIs	https://doi.org/10.1063/1.1638628
State	Published - Jan 5 2004

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1638628

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abstract = "Measurements and microscopic calculations of the α-factor in (GaIn)(NAs) quantum well lasers were discussed. Data was obtained from the shift of the Fabry-Perot modes with injection current was used to eliminate temperature-dependent artifacts. The molecular beam epitaxy was grown 350 μm long ridge-waveguide laser structure for the experiment. It was found that the value of α at the laser emission wavelength in this structure is around 2.5 +/-0.4 and remains constant with carrier density variations for a fixed emission wavelength.",

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T1 - Linewidth enhancement factor and optical gain in (GaIn)(NAs)/GaAs lasers

AU - Gerhardt, N. C.

AU - Hofmann, M. R.

AU - Hader, J.

AU - Moloney, J. V.

AU - Koch, S. W.

AU - Riechert, H.

PY - 2004/1/5

Y1 - 2004/1/5

N2 - Measurements and microscopic calculations of the α-factor in (GaIn)(NAs) quantum well lasers were discussed. Data was obtained from the shift of the Fabry-Perot modes with injection current was used to eliminate temperature-dependent artifacts. The molecular beam epitaxy was grown 350 μm long ridge-waveguide laser structure for the experiment. It was found that the value of α at the laser emission wavelength in this structure is around 2.5 +/-0.4 and remains constant with carrier density variations for a fixed emission wavelength.

AB - Measurements and microscopic calculations of the α-factor in (GaIn)(NAs) quantum well lasers were discussed. Data was obtained from the shift of the Fabry-Perot modes with injection current was used to eliminate temperature-dependent artifacts. The molecular beam epitaxy was grown 350 μm long ridge-waveguide laser structure for the experiment. It was found that the value of α at the laser emission wavelength in this structure is around 2.5 +/-0.4 and remains constant with carrier density variations for a fixed emission wavelength.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

ER -

Linewidth enhancement factor and optical gain in (GaIn)(NAs)/GaAs lasers

Abstract

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