Linewidth broadening factor of a microcavity semiconductor laser

R. Jin; D. Boggavarapu; G. Khitrova; H. M. Gibbs; Y. Z. Hu; S. W. Koch; N. Peyghambarian

doi:10.1063/1.108377

Linewidth broadening factor of a microcavity semiconductor laser

R. Jin, D. Boggavarapu, G. Khitrova, H. M. Gibbs, Y. Z. Hu, S. W. Koch, N. Peyghambarian

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

The emission linewidth above threshold is measured in a GaAs/AlGaAs microcavity surface-emitting laser with a single cavity mode. The measured linewidth broadening factor is in good agreement with theoretical calculations that include the most important many-body Coulomb effects of the electron-hole plasma.

Original language	English (US)
Pages (from-to)	1883-1885
Number of pages	3
Journal	Applied Physics Letters
Volume	61
Issue number	16
DOIs	https://doi.org/10.1063/1.108377
State	Published - 1992

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.108377

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@article{561c5aef4d804004ba1f70649b2a375f,

title = "Linewidth broadening factor of a microcavity semiconductor laser",

abstract = "The emission linewidth above threshold is measured in a GaAs/AlGaAs microcavity surface-emitting laser with a single cavity mode. The measured linewidth broadening factor is in good agreement with theoretical calculations that include the most important many-body Coulomb effects of the electron-hole plasma.",

author = "R. Jin and D. Boggavarapu and G. Khitrova and Gibbs, {H. M.} and Hu, {Y. Z.} and Koch, {S. W.} and N. Peyghambarian",

year = "1992",

doi = "10.1063/1.108377",

language = "English (US)",

volume = "61",

pages = "1883--1885",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "16",

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TY - JOUR

T1 - Linewidth broadening factor of a microcavity semiconductor laser

AU - Jin, R.

AU - Boggavarapu, D.

AU - Khitrova, G.

AU - Gibbs, H. M.

AU - Hu, Y. Z.

AU - Koch, S. W.

AU - Peyghambarian, N.

PY - 1992

Y1 - 1992

N2 - The emission linewidth above threshold is measured in a GaAs/AlGaAs microcavity surface-emitting laser with a single cavity mode. The measured linewidth broadening factor is in good agreement with theoretical calculations that include the most important many-body Coulomb effects of the electron-hole plasma.

AB - The emission linewidth above threshold is measured in a GaAs/AlGaAs microcavity surface-emitting laser with a single cavity mode. The measured linewidth broadening factor is in good agreement with theoretical calculations that include the most important many-body Coulomb effects of the electron-hole plasma.

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U2 - 10.1063/1.108377

DO - 10.1063/1.108377

M3 - Article

AN - SCOPUS:0000290422

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VL - 61

SP - 1883

EP - 1885

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

ER -

Linewidth broadening factor of a microcavity semiconductor laser

Abstract

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