Linear electrooptic coefficient of InP nanowires

Clint J. Novotny; Christopher T. DeRose; Robert A. Norwood; Paul K.L. Yu

doi:10.1021/nl072688k

Linear electrooptic coefficient of InP nanowires

Clint J. Novotny, Christopher T. DeRose, Robert A. Norwood, Paul K.L. Yu

Optical Sciences

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

A novel fabrication procedure is developed that allows for the direct measurement of the linear electrooptic coefficient of semiconducting nanowires to determine their viability for use in electrooptic devices. Vertically aligned InP nanowires are transferred from their growth substrate to a glass substrate using a host polymer, while still retaining the alignment of the nanowires. The linear electrooptic coefficient of the InP nanowires exhibited a 1-2 orders of magnitude enhancement over bulk InP and ranged from 31 to 147 pm/V. The figure of merit, n ³r, exhibited a factor of 20 enhancement over lithium niobate and ranged from 1010 to 4817 pm/V.

Original language	English (US)
Pages (from-to)	1020-1025
Number of pages	6
Journal	Nano Letters
Volume	8
Issue number	4
DOIs	https://doi.org/10.1021/nl072688k
State	Published - Apr 2008

ASJC Scopus subject areas

Bioengineering
General Chemistry
General Materials Science
Condensed Matter Physics
Mechanical Engineering

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10.1021/nl072688k

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abstract = "A novel fabrication procedure is developed that allows for the direct measurement of the linear electrooptic coefficient of semiconducting nanowires to determine their viability for use in electrooptic devices. Vertically aligned InP nanowires are transferred from their growth substrate to a glass substrate using a host polymer, while still retaining the alignment of the nanowires. The linear electrooptic coefficient of the InP nanowires exhibited a 1-2 orders of magnitude enhancement over bulk InP and ranged from 31 to 147 pm/V. The figure of merit, n 3r, exhibited a factor of 20 enhancement over lithium niobate and ranged from 1010 to 4817 pm/V.",

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AU - DeRose, Christopher T.

AU - Norwood, Robert A.

AU - Yu, Paul K.L.

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Y1 - 2008/4

N2 - A novel fabrication procedure is developed that allows for the direct measurement of the linear electrooptic coefficient of semiconducting nanowires to determine their viability for use in electrooptic devices. Vertically aligned InP nanowires are transferred from their growth substrate to a glass substrate using a host polymer, while still retaining the alignment of the nanowires. The linear electrooptic coefficient of the InP nanowires exhibited a 1-2 orders of magnitude enhancement over bulk InP and ranged from 31 to 147 pm/V. The figure of merit, n 3r, exhibited a factor of 20 enhancement over lithium niobate and ranged from 1010 to 4817 pm/V.

AB - A novel fabrication procedure is developed that allows for the direct measurement of the linear electrooptic coefficient of semiconducting nanowires to determine their viability for use in electrooptic devices. Vertically aligned InP nanowires are transferred from their growth substrate to a glass substrate using a host polymer, while still retaining the alignment of the nanowires. The linear electrooptic coefficient of the InP nanowires exhibited a 1-2 orders of magnitude enhancement over bulk InP and ranged from 31 to 147 pm/V. The figure of merit, n 3r, exhibited a factor of 20 enhancement over lithium niobate and ranged from 1010 to 4817 pm/V.

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Linear electrooptic coefficient of InP nanowires

Abstract

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