Light-induced gaps in semiconductor band-to-band transitions

Q. T. Vu, H. Haug, O. D. Mücke, T. Tritschler, M. Wegener, G. Khitrova, H. M. Gibbs

Research output: Contribution to journalArticlepeer-review

69 Scopus citations


A triplet around the third harmonic of the semiconductor band gap was observed when exciting 50-100 nm thin films GaAs films with 5 fs pulses at 3 × 1022 W/cm2. It was shown that this triplet in the optical spectrum was a result of light-induced gaps in the band structure, which arise from coherent band mixing. The 5 fs linearly polarized optical pulses from a Ti:sapphire mode-locked laser oscillator were employed which focused onto the GaAs film, held at room temperature, by means of a high numerical aperture reflective microscope objective. The GaAs layers of thickness l were grown directly on sapphire substrate in a molecular-beam epitaxy machine.

Original languageEnglish (US)
Article number217403
Pages (from-to)217403-1-217403-4
JournalPhysical review letters
Issue number21
StatePublished - May 28 2004

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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