@inproceedings{c1e0e270399e4290812d884502ceb9b0,
title = "Lattice mismatched growth for mid-IR VECSELs",
abstract = "We demonstrate a novel epitaxial process for the growth of low-dislocation density GaSb on GaAs. The growth mode involves the formation of large arrays of periodic 90° misfit dislocations at the interface between the two binary alloys which results in a completely strain relieved III-Sb epi-layer without the need for thick buffer layers. This epitaxial process is used for the growth of antimonide active regions directly on GaAs/AlGaAs distributed Bragg Reflectors (DBRs) resulting in 2 μm VECSELs on GaAs substrates.",
keywords = "Antimonides, MWIR, VECSEL",
author = "G. Balakrishnan and Rotter, \{T. J.\} and P. Ahirwar and Clark, \{S. P.\} and V. Patel and A. Albrecht and Hains, \{C. P.\} and Lai, \{Yi Ying\} and Wang, \{T. L.\} and Yarborough, \{J. M.\} and D. Mathine and Yushi Kaneda and Moloney, \{Jerome V.\} and J{\"o}rg Hader and Koch, \{S. W.\}",
note = "Funding Information: This research was conducted at the University of New Mexico and was funded by the following grants: AFOSR FA9550-09-1-0202 and AFOSR FA9550-07-1-0573.; Vertical External Cavity Surface Emitting Lasers, VECSELs ; Conference date: 24-01-2011 Through 25-01-2011",
year = "2011",
doi = "10.1117/12.874234",
language = "English (US)",
isbn = "9780819484567",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Vertical External Cavity Surface Emitting Lasers, VECSELs",
}