Lattice mismatched growth for mid-IR VECSELs

G. Balakrishnan, T. J. Rotter, P. Ahirwar, S. P. Clark, V. Patel, A. Albrecht, C. P. Hains, Yi Ying Lai, T. L. Wang, J. M. Yarborough, D. Mathine, Yushi Kaneda, Jerome V. Moloney, Jörg Hader, Stephan W Koch

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations


We demonstrate a novel epitaxial process for the growth of low-dislocation density GaSb on GaAs. The growth mode involves the formation of large arrays of periodic 90° misfit dislocations at the interface between the two binary alloys which results in a completely strain relieved III-Sb epi-layer without the need for thick buffer layers. This epitaxial process is used for the growth of antimonide active regions directly on GaAs/AlGaAs distributed Bragg Reflectors (DBRs) resulting in 2 μm VECSELs on GaAs substrates.

Original languageEnglish (US)
Title of host publicationVertical External Cavity Surface Emitting Lasers, VECSELs
StatePublished - 2011
EventVertical External Cavity Surface Emitting Lasers, VECSELs - San Francisco, CA, United States
Duration: Jan 24 2011Jan 25 2011

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


OtherVertical External Cavity Surface Emitting Lasers, VECSELs
Country/TerritoryUnited States
CitySan Francisco, CA


  • Antimonides
  • MWIR

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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