Lattice mismatched growth for mid-IR VECSELs

G. Balakrishnan; T. J. Rotter; P. Ahirwar; S. P. Clark; V. Patel; A. Albrecht; C. P. Hains; Yi Ying Lai; T. L. Wang; J. M. Yarborough; D. Mathine; Yushi Kaneda; Jerome V. Moloney; Jörg Hader; S. W. Koch

doi:10.1117/12.874234

Lattice mismatched growth for mid-IR VECSELs

G. Balakrishnan, T. J. Rotter, P. Ahirwar, S. P. Clark, V. Patel, A. Albrecht, C. P. Hains, Yi Ying Lai, T. L. Wang, J. M. Yarborough, D. Mathine, Yushi Kaneda, Jerome V. Moloney, Jörg Hader, S. W. Koch

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

We demonstrate a novel epitaxial process for the growth of low-dislocation density GaSb on GaAs. The growth mode involves the formation of large arrays of periodic 90° misfit dislocations at the interface between the two binary alloys which results in a completely strain relieved III-Sb epi-layer without the need for thick buffer layers. This epitaxial process is used for the growth of antimonide active regions directly on GaAs/AlGaAs distributed Bragg Reflectors (DBRs) resulting in 2 μm VECSELs on GaAs substrates.

Original language	English (US)
Title of host publication	Vertical External Cavity Surface Emitting Lasers, VECSELs
DOIs	https://doi.org/10.1117/12.874234
State	Published - 2011
Event	Vertical External Cavity Surface Emitting Lasers, VECSELs - San Francisco, CA, United States Duration: Jan 24 2011 → Jan 25 2011

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	7919
ISSN (Print)	0277-786X

Other

Other	Vertical External Cavity Surface Emitting Lasers, VECSELs
Country/Territory	United States
City	San Francisco, CA
Period	1/24/11 → 1/25/11

Keywords

Antimonides
MWIR
VECSEL

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.874234

Cite this

Balakrishnan, G., Rotter, T. J., Ahirwar, P., Clark, S. P., Patel, V., Albrecht, A., Hains, C. P., Lai, Y. Y., Wang, T. L., Yarborough, J. M., Mathine, D., Kaneda, Y., Moloney, J. V., Hader, J., & Koch, S. W. (2011). Lattice mismatched growth for mid-IR VECSELs. In Vertical External Cavity Surface Emitting Lasers, VECSELs Article 79190G (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7919). https://doi.org/10.1117/12.874234

Balakrishnan, G, Rotter, TJ, Ahirwar, P, Clark, SP, Patel, V, Albrecht, A, Hains, CP, Lai, YY, Wang, TL, Yarborough, JM, Mathine, D, Kaneda, Y , Moloney, JV , Hader, J & Koch, SW 2011, Lattice mismatched growth for mid-IR VECSELs. in Vertical External Cavity Surface Emitting Lasers, VECSELs., 79190G, Proceedings of SPIE - The International Society for Optical Engineering, vol. 7919, Vertical External Cavity Surface Emitting Lasers, VECSELs, San Francisco, CA, United States, 1/24/11. https://doi.org/10.1117/12.874234

@inproceedings{c1e0e270399e4290812d884502ceb9b0,

title = "Lattice mismatched growth for mid-IR VECSELs",

abstract = "We demonstrate a novel epitaxial process for the growth of low-dislocation density GaSb on GaAs. The growth mode involves the formation of large arrays of periodic 90° misfit dislocations at the interface between the two binary alloys which results in a completely strain relieved III-Sb epi-layer without the need for thick buffer layers. This epitaxial process is used for the growth of antimonide active regions directly on GaAs/AlGaAs distributed Bragg Reflectors (DBRs) resulting in 2 μm VECSELs on GaAs substrates.",

keywords = "Antimonides, MWIR, VECSEL",

author = "G. Balakrishnan and Rotter, {T. J.} and P. Ahirwar and Clark, {S. P.} and V. Patel and A. Albrecht and Hains, {C. P.} and Lai, {Yi Ying} and Wang, {T. L.} and Yarborough, {J. M.} and D. Mathine and Yushi Kaneda and Moloney, {Jerome V.} and J{\"o}rg Hader and Koch, {S. W.}",

note = "Funding Information: This research was conducted at the University of New Mexico and was funded by the following grants: AFOSR FA9550-09-1-0202 and AFOSR FA9550-07-1-0573.; Vertical External Cavity Surface Emitting Lasers, VECSELs ; Conference date: 24-01-2011 Through 25-01-2011",

year = "2011",

doi = "10.1117/12.874234",

language = "English (US)",

isbn = "9780819484567",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Vertical External Cavity Surface Emitting Lasers, VECSELs",

}

TY - GEN

T1 - Lattice mismatched growth for mid-IR VECSELs

AU - Balakrishnan, G.

AU - Rotter, T. J.

AU - Ahirwar, P.

AU - Clark, S. P.

AU - Patel, V.

AU - Albrecht, A.

AU - Hains, C. P.

AU - Lai, Yi Ying

AU - Wang, T. L.

AU - Yarborough, J. M.

AU - Mathine, D.

AU - Kaneda, Yushi

AU - Moloney, Jerome V.

AU - Hader, Jörg

AU - Koch, S. W.

N1 - Funding Information: This research was conducted at the University of New Mexico and was funded by the following grants: AFOSR FA9550-09-1-0202 and AFOSR FA9550-07-1-0573.

PY - 2011

Y1 - 2011

N2 - We demonstrate a novel epitaxial process for the growth of low-dislocation density GaSb on GaAs. The growth mode involves the formation of large arrays of periodic 90° misfit dislocations at the interface between the two binary alloys which results in a completely strain relieved III-Sb epi-layer without the need for thick buffer layers. This epitaxial process is used for the growth of antimonide active regions directly on GaAs/AlGaAs distributed Bragg Reflectors (DBRs) resulting in 2 μm VECSELs on GaAs substrates.

AB - We demonstrate a novel epitaxial process for the growth of low-dislocation density GaSb on GaAs. The growth mode involves the formation of large arrays of periodic 90° misfit dislocations at the interface between the two binary alloys which results in a completely strain relieved III-Sb epi-layer without the need for thick buffer layers. This epitaxial process is used for the growth of antimonide active regions directly on GaAs/AlGaAs distributed Bragg Reflectors (DBRs) resulting in 2 μm VECSELs on GaAs substrates.

KW - Antimonides

KW - MWIR

KW - VECSEL

UR - http://www.scopus.com/inward/record.url?scp=79953806603&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79953806603&partnerID=8YFLogxK

U2 - 10.1117/12.874234

DO - 10.1117/12.874234

M3 - Conference contribution

AN - SCOPUS:79953806603

SN - 9780819484567

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Vertical External Cavity Surface Emitting Lasers, VECSELs

T2 - Vertical External Cavity Surface Emitting Lasers, VECSELs

Y2 - 24 January 2011 through 25 January 2011

ER -

Lattice mismatched growth for mid-IR VECSELs

Abstract

Publication series

Other

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this