Large blueshift of the band gap of GaAsSbAlSb quantum wells with ion implantation

Xiaolan Sun; Nasser Peyghambarian; Alan R. Kost; Nayer Eradat

doi:10.1063/1.1845596

Large blueshift of the band gap of GaAsSbAlSb quantum wells with ion implantation

Xiaolan Sun, Nasser Peyghambarian, Alan R. Kost, Nayer Eradat

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Abstract

We describe studies of intermixing in GaAsSbAlSb quantum wells with 18.8% and 31% arsenic, grown on GaSb substrates. Samples were implanted with a 1× 1013 cm-2 dose of 330 keV boron ions and annealed. The band gap for the samples was determined from photoluminescence. The maximum blueshift of the band gap was 141 nm (86 meV) for the quantum wells with 18.8% arsenic and 198 nm (124 meV) for the quantum wells with 31% arsenic. The blueshifts are attributed to interdiffusion of both group-III and group-V constituents. Photoluminescence strength generally increased with annealing temperature.

Original language	English (US)
Article number	011905
Pages (from-to)	011905-1-011905-3
Journal	Applied Physics Letters
Volume	86
Issue number	1
DOIs	https://doi.org/10.1063/1.1845596
State	Published - Jan 2005

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Physics and Astronomy (miscellaneous)

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title = "Large blueshift of the band gap of GaAsSbAlSb quantum wells with ion implantation",

abstract = "We describe studies of intermixing in GaAsSbAlSb quantum wells with 18.8% and 31% arsenic, grown on GaSb substrates. Samples were implanted with a 1× 1013 cm-2 dose of 330 keV boron ions and annealed. The band gap for the samples was determined from photoluminescence. The maximum blueshift of the band gap was 141 nm (86 meV) for the quantum wells with 18.8% arsenic and 198 nm (124 meV) for the quantum wells with 31% arsenic. The blueshifts are attributed to interdiffusion of both group-III and group-V constituents. Photoluminescence strength generally increased with annealing temperature.",

author = "Xiaolan Sun and Nasser Peyghambarian and Kost, {Alan R.} and Nayer Eradat",

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AU - Sun, Xiaolan

AU - Peyghambarian, Nasser

AU - Kost, Alan R.

AU - Eradat, Nayer

PY - 2005/1

Y1 - 2005/1

N2 - We describe studies of intermixing in GaAsSbAlSb quantum wells with 18.8% and 31% arsenic, grown on GaSb substrates. Samples were implanted with a 1× 1013 cm-2 dose of 330 keV boron ions and annealed. The band gap for the samples was determined from photoluminescence. The maximum blueshift of the band gap was 141 nm (86 meV) for the quantum wells with 18.8% arsenic and 198 nm (124 meV) for the quantum wells with 31% arsenic. The blueshifts are attributed to interdiffusion of both group-III and group-V constituents. Photoluminescence strength generally increased with annealing temperature.

AB - We describe studies of intermixing in GaAsSbAlSb quantum wells with 18.8% and 31% arsenic, grown on GaSb substrates. Samples were implanted with a 1× 1013 cm-2 dose of 330 keV boron ions and annealed. The band gap for the samples was determined from photoluminescence. The maximum blueshift of the band gap was 141 nm (86 meV) for the quantum wells with 18.8% arsenic and 198 nm (124 meV) for the quantum wells with 31% arsenic. The blueshifts are attributed to interdiffusion of both group-III and group-V constituents. Photoluminescence strength generally increased with annealing temperature.

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Large blueshift of the band gap of GaAsSbAlSb quantum wells with ion implantation

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