Kinetics and mechanism of carbon incorporation in ultrathin silicon-based dielectric films

Niraj Rana, Prashant Raghu, Farhang Shadman

Research output: Contribution to journalArticlepeer-review

16 Scopus citations


The effect of various processing conditions on the extent of adsorption of organics and incorporation of carbon in Si/SiO2 during thermal oxidation is investigated. The key parameters studied are preoxidation cleaning, temperature-ramp rate and ambient. gas-phase impurity concentration, and the presence of moisture. A novel method based on the catalytic oxidation of organics is developed to monitor and characterize the outgassing of organics. Results show that SC1-last surfaces adsorb more polar organics than do HF-last surfaces; this results in a higher amount of carbon incorporation. HF-last surfaces, however, retain a larger fraction of the adsorbed organics. Addition of oxygen to the temperature-ramp ambient reduces the extent of carbon incorporation. The kinetics and mechanisms of carbon incorporation in Si/SiO2 substrates are investigated. A reaction model based on the competitive processes of desorption, readsorption, decomposition, oxidation, and chemisorption of the adsorbed organics is developed. This model provides a better understanding of one of the key aspects of defect formation in silicon-based dielectric thin films.

Original languageEnglish (US)
Pages (from-to)F35-F42
JournalJournal of the Electrochemical Society
Issue number5
StatePublished - May 2002

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry


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