Ion projection lithography for resistless patterning of thin magnetic films

W. H. Bruenger; M. Torkler; C. Dzionk; B. D. Terris; L. Folks; D. Weller; H. Rothuizen; P. Vettiger; G. Stangl; W. Fallmann

doi:10.1016/S0167-9317(00)00410-X

Ion projection lithography for resistless patterning of thin magnetic films

W. H. Bruenger, M. Torkler, C. Dzionk, B. D. Terris, L. Folks, D. Weller, H. Rothuizen, P. Vettiger, G. Stangl, W. Fallmann

Research output: Contribution to journal › Conference article › peer-review

12 Scopus citations

Abstract

The ion projector at the Fraunhofer Institute in Berlin (manufactured by Ion Microfabrication Systems, IMS, Vienna) has been used to pattern thin magnetic films. Disordering of chemically ordered FePt films by patterned ion irradiation (dose: 10¹⁶ He⁺ ions/cm²; 75 keV) without a resist mask on the sample is demonstrated. Magnetically altered areas have been investigated by magnetic force microscopy. Magnetic islands of 340 nm width could be detected, limited by the size of the open stencil mask holes. The projector is capable of 50 nm resolution which would result in a storage density of 64 Gb/in². In a second experiment the ion projector has been applied for structured ion milling with Xe⁺ ions on thin metallic films also without a resist mask. In a polycrystalline Au film 130 nm lines and spaces with a depth of 8 nm could be produced by a dose of 10¹⁵Xe⁺ ions at 75 keV energy.

Original language	English (US)
Pages (from-to)	605-608
Number of pages	4
Journal	Microelectronic Engineering
Volume	53
Issue number	1
DOIs	https://doi.org/10.1016/S0167-9317(00)00410-X
State	Published - Jun 2000
Externally published	Yes
Event	25th International Conference on Micro- and Nano-Engineering - Rome, Italy Duration: Sep 21 1999 → Sep 23 1999

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/S0167-9317(00)00410-X

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title = "Ion projection lithography for resistless patterning of thin magnetic films",

abstract = "The ion projector at the Fraunhofer Institute in Berlin (manufactured by Ion Microfabrication Systems, IMS, Vienna) has been used to pattern thin magnetic films. Disordering of chemically ordered FePt films by patterned ion irradiation (dose: 1016 He+ ions/cm2; 75 keV) without a resist mask on the sample is demonstrated. Magnetically altered areas have been investigated by magnetic force microscopy. Magnetic islands of 340 nm width could be detected, limited by the size of the open stencil mask holes. The projector is capable of 50 nm resolution which would result in a storage density of 64 Gb/in2. In a second experiment the ion projector has been applied for structured ion milling with Xe+ ions on thin metallic films also without a resist mask. In a polycrystalline Au film 130 nm lines and spaces with a depth of 8 nm could be produced by a dose of 1015Xe+ ions at 75 keV energy.",

author = "Bruenger, {W. H.} and M. Torkler and C. Dzionk and Terris, {B. D.} and L. Folks and D. Weller and H. Rothuizen and P. Vettiger and G. Stangl and W. Fallmann",

year = "2000",

month = jun,

doi = "10.1016/S0167-9317(00)00410-X",

language = "English (US)",

volume = "53",

pages = "605--608",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

number = "1",

note = "25th International Conference on Micro- and Nano-Engineering ; Conference date: 21-09-1999 Through 23-09-1999",

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TY - JOUR

T1 - Ion projection lithography for resistless patterning of thin magnetic films

AU - Bruenger, W. H.

AU - Torkler, M.

AU - Dzionk, C.

AU - Terris, B. D.

AU - Folks, L.

AU - Weller, D.

AU - Rothuizen, H.

AU - Vettiger, P.

AU - Stangl, G.

AU - Fallmann, W.

PY - 2000/6

Y1 - 2000/6

N2 - The ion projector at the Fraunhofer Institute in Berlin (manufactured by Ion Microfabrication Systems, IMS, Vienna) has been used to pattern thin magnetic films. Disordering of chemically ordered FePt films by patterned ion irradiation (dose: 1016 He+ ions/cm2; 75 keV) without a resist mask on the sample is demonstrated. Magnetically altered areas have been investigated by magnetic force microscopy. Magnetic islands of 340 nm width could be detected, limited by the size of the open stencil mask holes. The projector is capable of 50 nm resolution which would result in a storage density of 64 Gb/in2. In a second experiment the ion projector has been applied for structured ion milling with Xe+ ions on thin metallic films also without a resist mask. In a polycrystalline Au film 130 nm lines and spaces with a depth of 8 nm could be produced by a dose of 1015Xe+ ions at 75 keV energy.

AB - The ion projector at the Fraunhofer Institute in Berlin (manufactured by Ion Microfabrication Systems, IMS, Vienna) has been used to pattern thin magnetic films. Disordering of chemically ordered FePt films by patterned ion irradiation (dose: 1016 He+ ions/cm2; 75 keV) without a resist mask on the sample is demonstrated. Magnetically altered areas have been investigated by magnetic force microscopy. Magnetic islands of 340 nm width could be detected, limited by the size of the open stencil mask holes. The projector is capable of 50 nm resolution which would result in a storage density of 64 Gb/in2. In a second experiment the ion projector has been applied for structured ion milling with Xe+ ions on thin metallic films also without a resist mask. In a polycrystalline Au film 130 nm lines and spaces with a depth of 8 nm could be produced by a dose of 1015Xe+ ions at 75 keV energy.

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U2 - 10.1016/S0167-9317(00)00410-X

DO - 10.1016/S0167-9317(00)00410-X

M3 - Conference article

AN - SCOPUS:0034205525

SN - 0167-9317

VL - 53

SP - 605

EP - 608

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 1

T2 - 25th International Conference on Micro- and Nano-Engineering

Y2 - 21 September 1999 through 23 September 1999

ER -

Ion projection lithography for resistless patterning of thin magnetic films

Abstract

ASJC Scopus subject areas

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