Ion beam lithography system using a high brightness H2+ ion source

Benjamin M. Siegel; Gary R. Hanson; Miklos Szilagyi; David R. Thomas; Richard J. Blackwell; Hongyul Paik

doi:10.1117/12.933427

Ion beam lithography system using a high brightness H₂⁺ ion source

Benjamin M. Siegel, Gary R. Hanson, Miklos Szilagyi, David R. Thomas, Richard J. Blackwell, Hongyul Paik

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

The characteristics of the ion source determine the writing speed and resolution that can be realized in direct writing ion beam lithography with focussed ion probes. We have developed an H₂⁺ ion source with very hiah brightness and low energy spread.¹ Two ion beam lithography systems based on this source are being developed. CAD has been used to design two ion optical-deflector systems to focus this source to high resolution, high current density probes. The design parameters are calculated to produce ion probes 10 to 50 nm in diameter with current densities ≧ 100 amp/cm². The systems will be used to investigate and apply ion beam lithography; ion-resist interactions, resist exposure and development characteristics, resolution limits, ion beam structuring of devices, etc.

Original language	English (US)
Pages (from-to)	152-157
Number of pages	6
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	333
DOIs	https://doi.org/10.1117/12.933427
State	Published - Jun 30 1982
Event	Submicron Lithography I 1982 - Santa Clara, United States Duration: Jan 1 1982 → Jan 2 1982

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.933427

Cite this

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title = "Ion beam lithography system using a high brightness H2+ ion source",

abstract = "The characteristics of the ion source determine the writing speed and resolution that can be realized in direct writing ion beam lithography with focussed ion probes. We have developed an H2+ ion source with very hiah brightness and low energy spread.1 Two ion beam lithography systems based on this source are being developed. CAD has been used to design two ion optical-deflector systems to focus this source to high resolution, high current density probes. The design parameters are calculated to produce ion probes 10 to 50 nm in diameter with current densities ≧ 100 amp/cm2. The systems will be used to investigate and apply ion beam lithography; ion-resist interactions, resist exposure and development characteristics, resolution limits, ion beam structuring of devices, etc.",

author = "Siegel, {Benjamin M.} and Hanson, {Gary R.} and Miklos Szilagyi and Thomas, {David R.} and Blackwell, {Richard J.} and Hongyul Paik",

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T1 - Ion beam lithography system using a high brightness H2+ ion source

AU - Siegel, Benjamin M.

AU - Hanson, Gary R.

AU - Szilagyi, Miklos

AU - Thomas, David R.

AU - Blackwell, Richard J.

AU - Paik, Hongyul

PY - 1982/6/30

Y1 - 1982/6/30

N2 - The characteristics of the ion source determine the writing speed and resolution that can be realized in direct writing ion beam lithography with focussed ion probes. We have developed an H2+ ion source with very hiah brightness and low energy spread.1 Two ion beam lithography systems based on this source are being developed. CAD has been used to design two ion optical-deflector systems to focus this source to high resolution, high current density probes. The design parameters are calculated to produce ion probes 10 to 50 nm in diameter with current densities ≧ 100 amp/cm2. The systems will be used to investigate and apply ion beam lithography; ion-resist interactions, resist exposure and development characteristics, resolution limits, ion beam structuring of devices, etc.

AB - The characteristics of the ion source determine the writing speed and resolution that can be realized in direct writing ion beam lithography with focussed ion probes. We have developed an H2+ ion source with very hiah brightness and low energy spread.1 Two ion beam lithography systems based on this source are being developed. CAD has been used to design two ion optical-deflector systems to focus this source to high resolution, high current density probes. The design parameters are calculated to produce ion probes 10 to 50 nm in diameter with current densities ≧ 100 amp/cm2. The systems will be used to investigate and apply ion beam lithography; ion-resist interactions, resist exposure and development characteristics, resolution limits, ion beam structuring of devices, etc.

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DO - 10.1117/12.933427

M3 - Conference article

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JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Submicron Lithography I 1982

Y2 - 1 January 1982 through 2 January 1982

ER -

Ion beam lithography system using a high brightness H₂⁺ ion source

Abstract

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