Ion-beam-induced conductivity in polymer films

T. Venkatesan; S. R. Forrest; M. L. Kaplan; C. A. Murray; P. H. Schmidt; B. J. Wilkens

doi:10.1063/1.332471

Ion-beam-induced conductivity in polymer films

T. Venkatesan, S. R. Forrest, M. L. Kaplan, C. A. Murray, P. H. Schmidt, B. J. Wilkens

Research output: Contribution to journal › Article › peer-review

109 Scopus citations

Abstract

Polymer films darken upon irradiation with energetic ion beams. At high doses (10¹⁶-10¹⁷ cm^- ²) of 2-MeV Ar⁺ ions, the resistivity of these insulating films decreases dramatically to 3.5×10^-3 Ω cm. Furthermore, over a wide range of doses (10¹⁴-10 ¹⁵ cm^-2) these films exhibit a temperature-dependent resistivity characteristic of carrier transport via hopping between isolated conducting islands. Rutherford backscattering measurements indicate that while a substantial amount of the carbon is retained in the film, other constituent elements are lost. Raman spectra show that the films are highly disordered at large ion doses.

Original language	English (US)
Pages (from-to)	3150-3153
Number of pages	4
Journal	Journal of Applied Physics
Volume	54
Issue number	6
DOIs	https://doi.org/10.1063/1.332471
State	Published - 1983
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.332471

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title = "Ion-beam-induced conductivity in polymer films",

abstract = "Polymer films darken upon irradiation with energetic ion beams. At high doses (1016-1017 cm- 2) of 2-MeV Ar+ ions, the resistivity of these insulating films decreases dramatically to 3.5×10-3 Ω cm. Furthermore, over a wide range of doses (1014-10 15 cm-2) these films exhibit a temperature-dependent resistivity characteristic of carrier transport via hopping between isolated conducting islands. Rutherford backscattering measurements indicate that while a substantial amount of the carbon is retained in the film, other constituent elements are lost. Raman spectra show that the films are highly disordered at large ion doses.",

author = "T. Venkatesan and Forrest, {S. R.} and Kaplan, {M. L.} and Murray, {C. A.} and Schmidt, {P. H.} and Wilkens, {B. J.}",

year = "1983",

doi = "10.1063/1.332471",

language = "English (US)",

volume = "54",

pages = "3150--3153",

journal = "Journal of Applied Physics",

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publisher = "American Institute of Physics",

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T1 - Ion-beam-induced conductivity in polymer films

AU - Venkatesan, T.

AU - Forrest, S. R.

AU - Kaplan, M. L.

AU - Murray, C. A.

AU - Schmidt, P. H.

AU - Wilkens, B. J.

PY - 1983

Y1 - 1983

N2 - Polymer films darken upon irradiation with energetic ion beams. At high doses (1016-1017 cm- 2) of 2-MeV Ar+ ions, the resistivity of these insulating films decreases dramatically to 3.5×10-3 Ω cm. Furthermore, over a wide range of doses (1014-10 15 cm-2) these films exhibit a temperature-dependent resistivity characteristic of carrier transport via hopping between isolated conducting islands. Rutherford backscattering measurements indicate that while a substantial amount of the carbon is retained in the film, other constituent elements are lost. Raman spectra show that the films are highly disordered at large ion doses.

AB - Polymer films darken upon irradiation with energetic ion beams. At high doses (1016-1017 cm- 2) of 2-MeV Ar+ ions, the resistivity of these insulating films decreases dramatically to 3.5×10-3 Ω cm. Furthermore, over a wide range of doses (1014-10 15 cm-2) these films exhibit a temperature-dependent resistivity characteristic of carrier transport via hopping between isolated conducting islands. Rutherford backscattering measurements indicate that while a substantial amount of the carbon is retained in the film, other constituent elements are lost. Raman spectra show that the films are highly disordered at large ion doses.

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

ER -

Ion-beam-induced conductivity in polymer films

Abstract

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