Investigation of thermal resistance and power consumption in Ga-doped indium oxide (In2O3) nanowire phase change random access memory

Bo Jin; Taekyung Lim; Sanghyun Ju; Marat I. Latypov; Dong Hai Pi; Hyoung Seop Kim; M. Meyyappan; Jeong Soo Lee

doi:10.1063/1.4868537

Investigation of thermal resistance and power consumption in Ga-doped indium oxide (In₂O₃) nanowire phase change random access memory

Bo Jin, Taekyung Lim, Sanghyun Ju, Marat I. Latypov, Dong Hai Pi, Hyoung Seop Kim, M. Meyyappan, Jeong Soo Lee

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The resistance stability and thermal resistance of phase change memory devices using ∼40 nm diameter Ga-doped In₂O₃ nanowires (Ga:In₂O₃ NW) with different Ga-doping concentrations have been investigated. The estimated resistance stability (R(t)/R₀ ratio) improves with higher Ga concentration and is dependent on annealing temperature. The extracted thermal resistance (R_th) increases with higher Ga-concentration and thus the power consumption can be reduced by ∼90% for the 11.5% Ga:In₂O₃ NW, compared to the 2.1% Ga:In₂O₃ NW. The excellent characteristics of Ga-doped In₂O₃ nanowire devices offer an avenue to develop low power and reliable phase change random access memory applications.

Original language	English (US)
Article number	103510
Journal	Applied Physics Letters
Volume	104
Issue number	10
DOIs	https://doi.org/10.1063/1.4868537
State	Published - Mar 10 2014
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4868537

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title = "Investigation of thermal resistance and power consumption in Ga-doped indium oxide (In2O3) nanowire phase change random access memory",

abstract = "The resistance stability and thermal resistance of phase change memory devices using ∼40 nm diameter Ga-doped In2O3 nanowires (Ga:In2O3 NW) with different Ga-doping concentrations have been investigated. The estimated resistance stability (R(t)/R0 ratio) improves with higher Ga concentration and is dependent on annealing temperature. The extracted thermal resistance (Rth) increases with higher Ga-concentration and thus the power consumption can be reduced by ∼90% for the 11.5% Ga:In2O3 NW, compared to the 2.1% Ga:In2O3 NW. The excellent characteristics of Ga-doped In2O3 nanowire devices offer an avenue to develop low power and reliable phase change random access memory applications.",

author = "Bo Jin and Taekyung Lim and Sanghyun Ju and Latypov, {Marat I.} and Pi, {Dong Hai} and {Seop Kim}, Hyoung and M. Meyyappan and Lee, {Jeong Soo}",

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doi = "10.1063/1.4868537",

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volume = "104",

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T1 - Investigation of thermal resistance and power consumption in Ga-doped indium oxide (In2O3) nanowire phase change random access memory

AU - Jin, Bo

AU - Lim, Taekyung

AU - Ju, Sanghyun

AU - Latypov, Marat I.

AU - Pi, Dong Hai

AU - Seop Kim, Hyoung

AU - Meyyappan, M.

AU - Lee, Jeong Soo

PY - 2014/3/10

Y1 - 2014/3/10

N2 - The resistance stability and thermal resistance of phase change memory devices using ∼40 nm diameter Ga-doped In2O3 nanowires (Ga:In2O3 NW) with different Ga-doping concentrations have been investigated. The estimated resistance stability (R(t)/R0 ratio) improves with higher Ga concentration and is dependent on annealing temperature. The extracted thermal resistance (Rth) increases with higher Ga-concentration and thus the power consumption can be reduced by ∼90% for the 11.5% Ga:In2O3 NW, compared to the 2.1% Ga:In2O3 NW. The excellent characteristics of Ga-doped In2O3 nanowire devices offer an avenue to develop low power and reliable phase change random access memory applications.

AB - The resistance stability and thermal resistance of phase change memory devices using ∼40 nm diameter Ga-doped In2O3 nanowires (Ga:In2O3 NW) with different Ga-doping concentrations have been investigated. The estimated resistance stability (R(t)/R0 ratio) improves with higher Ga concentration and is dependent on annealing temperature. The extracted thermal resistance (Rth) increases with higher Ga-concentration and thus the power consumption can be reduced by ∼90% for the 11.5% Ga:In2O3 NW, compared to the 2.1% Ga:In2O3 NW. The excellent characteristics of Ga-doped In2O3 nanowire devices offer an avenue to develop low power and reliable phase change random access memory applications.

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Investigation of thermal resistance and power consumption in Ga-doped indium oxide (In₂O₃) nanowire phase change random access memory

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