Investigation of thermal resistance and power consumption in Ga-doped indium oxide (In2O3) nanowire phase change random access memory

Bo Jin, Taekyung Lim, Sanghyun Ju, Marat I. Latypov, Dong Hai Pi, Hyoung Seop Kim, M. Meyyappan, Jeong Soo Lee

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

The resistance stability and thermal resistance of phase change memory devices using ∼40 nm diameter Ga-doped In2O3 nanowires (Ga:In2O3 NW) with different Ga-doping concentrations have been investigated. The estimated resistance stability (R(t)/R0 ratio) improves with higher Ga concentration and is dependent on annealing temperature. The extracted thermal resistance (Rth) increases with higher Ga-concentration and thus the power consumption can be reduced by ∼90% for the 11.5% Ga:In2O3 NW, compared to the 2.1% Ga:In2O3 NW. The excellent characteristics of Ga-doped In2O3 nanowire devices offer an avenue to develop low power and reliable phase change random access memory applications.

Original languageEnglish (US)
Article number103510
JournalApplied Physics Letters
Volume104
Issue number10
DOIs
StatePublished - Mar 10 2014
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint

Dive into the research topics of 'Investigation of thermal resistance and power consumption in Ga-doped indium oxide (In2O3) nanowire phase change random access memory'. Together they form a unique fingerprint.

Cite this