Intrinsic sensitivity of Cd1-XZnXTe semiconductors for digital radiographic imaging

G. C. Giakos; R. Guntupalli; J. A. De Abreu-Garcia; N. Shah; S. Vedantham; S. Suryanarayanan; S. Chowdhury; N. Patnekar; S. Sumrain; K. Mehta; E. Evans; A. Orozco; V. Kumar; O. Ugweje; A. Moholkar

doi:10.1109/TIM.2003.818563

Intrinsic sensitivity of Cd_1-XZn_XTe semiconductors for digital radiographic imaging

G. C. Giakos
, R. Guntupalli
, J. A. De Abreu-Garcia
, N. Shah
, S. Vedantham
, S. Suryanarayanan
, S. Chowdhury
, N. Patnekar
, S. Sumrain
, K. Mehta
, E. Evans
, A. Orozco
, V. Kumar
, O. Ugweje
, A. Moholkar

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The intrinsic sensitivity of Cadmium Zinc Telluride (Cd_1-xZn_xTe) semiconductor detectors has been experimentally measured, within the X-ray diagnostic energy range. The results of this study indicate that the intrinsic efficiency of Cd_1-xZn_xTe can be increased by optimizing geometrical and physical detection parameters such as X-ray irradiation geometry, detector thickness, and applied electric field. These results indicate that Cd_1-xZn_xTe is a suitable candidate for digital imaging applications.

Original language	English (US)
Pages (from-to)	1559-1565
Number of pages	7
Journal	IEEE Transactions on Instrumentation and Measurement
Volume	52
Issue number	5
DOIs	https://doi.org/10.1109/TIM.2003.818563
State	Published - Oct 2003
Externally published	Yes

Keywords

CdZnTe detectors
Digital imaging
Image enhancement
Intrinsic sensitivity

ASJC Scopus subject areas

Instrumentation
Electrical and Electronic Engineering

Access to Document

10.1109/TIM.2003.818563

Cite this

Giakos, G. C., Guntupalli, R., De Abreu-Garcia, J. A., Shah, N., Vedantham, S., Suryanarayanan, S., Chowdhury, S., Patnekar, N., Sumrain, S., Mehta, K., Evans, E., Orozco, A., Kumar, V., Ugweje, O., & Moholkar, A. (2003). Intrinsic sensitivity of Cd_1-XZn_XTe semiconductors for digital radiographic imaging. IEEE Transactions on Instrumentation and Measurement, 52(5), 1559-1565. https://doi.org/10.1109/TIM.2003.818563

Giakos, GC, Guntupalli, R, De Abreu-Garcia, JA, Shah, N, Vedantham, S, Suryanarayanan, S, Chowdhury, S, Patnekar, N, Sumrain, S, Mehta, K, Evans, E, Orozco, A, Kumar, V, Ugweje, O & Moholkar, A 2003, 'Intrinsic sensitivity of Cd_1-XZn_XTe semiconductors for digital radiographic imaging', IEEE Transactions on Instrumentation and Measurement, vol. 52, no. 5, pp. 1559-1565. https://doi.org/10.1109/TIM.2003.818563

@article{6c6640a61e82472eb38746cccacdb2f8,

title = "Intrinsic sensitivity of Cd1-XZnXTe semiconductors for digital radiographic imaging",

abstract = "The intrinsic sensitivity of Cadmium Zinc Telluride (Cd1-xZnxTe) semiconductor detectors has been experimentally measured, within the X-ray diagnostic energy range. The results of this study indicate that the intrinsic efficiency of Cd1-xZnxTe can be increased by optimizing geometrical and physical detection parameters such as X-ray irradiation geometry, detector thickness, and applied electric field. These results indicate that Cd1-xZnxTe is a suitable candidate for digital imaging applications.",

keywords = "CdZnTe detectors, Digital imaging, Image enhancement, Intrinsic sensitivity",

author = "Giakos, \{G. C.\} and R. Guntupalli and \{De Abreu-Garcia\}, \{J. A.\} and N. Shah and S. Vedantham and S. Suryanarayanan and S. Chowdhury and N. Patnekar and S. Sumrain and K. Mehta and E. Evans and A. Orozco and V. Kumar and O. Ugweje and A. Moholkar",

note = "Funding Information: Manuscript received May 26, 2003; revised July 3, 2003. This work was supported in part by the Institute of Biomedical Engineering Research (IBER) under a Faculty Research Grant.",

year = "2003",

month = oct,

doi = "10.1109/TIM.2003.818563",

language = "English (US)",

volume = "52",

pages = "1559--1565",

journal = "IEEE Transactions on Instrumentation and Measurement",

issn = "0018-9456",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5",

}

TY - JOUR

T1 - Intrinsic sensitivity of Cd1-XZnXTe semiconductors for digital radiographic imaging

AU - Giakos, G. C.

AU - Guntupalli, R.

AU - De Abreu-Garcia, J. A.

AU - Shah, N.

AU - Vedantham, S.

AU - Suryanarayanan, S.

AU - Chowdhury, S.

AU - Patnekar, N.

AU - Sumrain, S.

AU - Mehta, K.

AU - Evans, E.

AU - Orozco, A.

AU - Kumar, V.

AU - Ugweje, O.

AU - Moholkar, A.

N1 - Funding Information: Manuscript received May 26, 2003; revised July 3, 2003. This work was supported in part by the Institute of Biomedical Engineering Research (IBER) under a Faculty Research Grant.

PY - 2003/10

Y1 - 2003/10

N2 - The intrinsic sensitivity of Cadmium Zinc Telluride (Cd1-xZnxTe) semiconductor detectors has been experimentally measured, within the X-ray diagnostic energy range. The results of this study indicate that the intrinsic efficiency of Cd1-xZnxTe can be increased by optimizing geometrical and physical detection parameters such as X-ray irradiation geometry, detector thickness, and applied electric field. These results indicate that Cd1-xZnxTe is a suitable candidate for digital imaging applications.

AB - The intrinsic sensitivity of Cadmium Zinc Telluride (Cd1-xZnxTe) semiconductor detectors has been experimentally measured, within the X-ray diagnostic energy range. The results of this study indicate that the intrinsic efficiency of Cd1-xZnxTe can be increased by optimizing geometrical and physical detection parameters such as X-ray irradiation geometry, detector thickness, and applied electric field. These results indicate that Cd1-xZnxTe is a suitable candidate for digital imaging applications.

KW - CdZnTe detectors

KW - Digital imaging

KW - Image enhancement

KW - Intrinsic sensitivity

UR - https://www.scopus.com/pages/publications/10744233710

UR - https://www.scopus.com/pages/publications/10744233710#tab=citedBy

U2 - 10.1109/TIM.2003.818563

DO - 10.1109/TIM.2003.818563

M3 - Article

AN - SCOPUS:10744233710

SN - 0018-9456

VL - 52

SP - 1559

EP - 1565

JO - IEEE Transactions on Instrumentation and Measurement

JF - IEEE Transactions on Instrumentation and Measurement

IS - 5

ER -