Intrinsic sensitivity of Cd1-XZnXTe semiconductors for digital radiographic imaging

G. C. Giakos, R. Guntupalli, J. A. De Abreu-Garcia, N. Shah, S. Vedantham, S. Suryanarayanan, S. Chowdhury, N. Patnekar, S. Sumrain, K. Mehta, E. Evans, A. Orozco, V. Kumar, O. Ugweje, A. Moholkar

Research output: Contribution to journalArticlepeer-review


The intrinsic sensitivity of Cadmium Zinc Telluride (Cd1-xZnxTe) semiconductor detectors has been experimentally measured, within the X-ray diagnostic energy range. The results of this study indicate that the intrinsic efficiency of Cd1-xZnxTe can be increased by optimizing geometrical and physical detection parameters such as X-ray irradiation geometry, detector thickness, and applied electric field. These results indicate that Cd1-xZnxTe is a suitable candidate for digital imaging applications.

Original languageEnglish (US)
Pages (from-to)1559-1565
Number of pages7
JournalIEEE Transactions on Instrumentation and Measurement
Issue number5
StatePublished - Oct 2003
Externally publishedYes


  • CdZnTe detectors
  • Digital imaging
  • Image enhancement
  • Intrinsic sensitivity

ASJC Scopus subject areas

  • Instrumentation
  • Electrical and Electronic Engineering


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