Intrinsic dynamics of quantum-dash lasers

Cheng Chen; Yang Wang; Hery Susanto Djie; Boon S. Ooi; Luke F. Lester; Thomas L. Koch; James C.M. Hwang

doi:10.1109/JSTQE.2010.2103373

Intrinsic dynamics of quantum-dash lasers

Cheng Chen, Yang Wang, Hery Susanto Djie, Boon S. Ooi, Luke F. Lester, Thomas L. Koch, James C.M. Hwang

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Temperature-dependent intrinsic modulation response of InAs/InAlGaAs quantum-dash lasers was investigated by using pulse optical injection modulation to minimize the effects of parasitics and self-heating. Compared to typical quantum-well lasers, the quantum-dash lasers were found to have comparable differential gain but approximately twice the gain compression factor, probably due to carrier heating by free-carrier absorption, as opposed to stimulated transition. Therefore, the narrower modulation bandwidth of the quantum-dash lasers than that of quantum-well lasers was attributed to their higher gain compression factor. In addition, as expected, quantum-dash lasers with relatively long and uniform dashes exhibit higher temperature stability than quantum-well lasers. However, the lasers with relatively short and nonuniform dashes exhibit stronger temperature dependence, probably due to their higher surface-to-volume ratio and nonuniform dash sizes.

Original language	English (US)
Article number	9
Pages (from-to)	1167-1174
Number of pages	8
Journal	IEEE Journal on Selected Topics in Quantum Electronics
Volume	17
Issue number	5
DOIs	https://doi.org/10.1109/JSTQE.2010.2103373
State	Published - 2011
Externally published	Yes

Keywords

Differential gain
microwave modulation
optical modulation
quantum wells
quantum wires
semiconductor lasers

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/JSTQE.2010.2103373

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@article{653a5cb75f5b4cd3a958e55472db85da,

title = "Intrinsic dynamics of quantum-dash lasers",

abstract = "Temperature-dependent intrinsic modulation response of InAs/InAlGaAs quantum-dash lasers was investigated by using pulse optical injection modulation to minimize the effects of parasitics and self-heating. Compared to typical quantum-well lasers, the quantum-dash lasers were found to have comparable differential gain but approximately twice the gain compression factor, probably due to carrier heating by free-carrier absorption, as opposed to stimulated transition. Therefore, the narrower modulation bandwidth of the quantum-dash lasers than that of quantum-well lasers was attributed to their higher gain compression factor. In addition, as expected, quantum-dash lasers with relatively long and uniform dashes exhibit higher temperature stability than quantum-well lasers. However, the lasers with relatively short and nonuniform dashes exhibit stronger temperature dependence, probably due to their higher surface-to-volume ratio and nonuniform dash sizes.",

keywords = "Differential gain, microwave modulation, optical modulation, quantum wells, quantum wires, semiconductor lasers",

author = "Cheng Chen and Yang Wang and Djie, {Hery Susanto} and Ooi, {Boon S.} and Lester, {Luke F.} and Koch, {Thomas L.} and Hwang, {James C.M.}",

note = "Funding Information: Manuscript received August 10, 2010; revised October 4, 2010, and November 12, 2010; accepted December 22, 2010. Date of publication February 17, 2011; date of current version October 5, 2011. This work was supported in part by the U.S. National Science Foundation under Grant 0725647, in part by the Army Research Laboratory under Cooperative Agreement W911NF-07–2-0064, and in part by the Commonwealth of Pennsylvania, Department of Community and Economic Development under Pennsylvania Infrastructure Technology Alliance.",

year = "2011",

doi = "10.1109/JSTQE.2010.2103373",

language = "English (US)",

volume = "17",

pages = "1167--1174",

journal = "IEEE Journal on Selected Topics in Quantum Electronics",

issn = "1077-260X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Intrinsic dynamics of quantum-dash lasers

AU - Chen, Cheng

AU - Wang, Yang

AU - Djie, Hery Susanto

AU - Ooi, Boon S.

AU - Lester, Luke F.

AU - Koch, Thomas L.

AU - Hwang, James C.M.

N1 - Funding Information: Manuscript received August 10, 2010; revised October 4, 2010, and November 12, 2010; accepted December 22, 2010. Date of publication February 17, 2011; date of current version October 5, 2011. This work was supported in part by the U.S. National Science Foundation under Grant 0725647, in part by the Army Research Laboratory under Cooperative Agreement W911NF-07–2-0064, and in part by the Commonwealth of Pennsylvania, Department of Community and Economic Development under Pennsylvania Infrastructure Technology Alliance.

PY - 2011

Y1 - 2011

N2 - Temperature-dependent intrinsic modulation response of InAs/InAlGaAs quantum-dash lasers was investigated by using pulse optical injection modulation to minimize the effects of parasitics and self-heating. Compared to typical quantum-well lasers, the quantum-dash lasers were found to have comparable differential gain but approximately twice the gain compression factor, probably due to carrier heating by free-carrier absorption, as opposed to stimulated transition. Therefore, the narrower modulation bandwidth of the quantum-dash lasers than that of quantum-well lasers was attributed to their higher gain compression factor. In addition, as expected, quantum-dash lasers with relatively long and uniform dashes exhibit higher temperature stability than quantum-well lasers. However, the lasers with relatively short and nonuniform dashes exhibit stronger temperature dependence, probably due to their higher surface-to-volume ratio and nonuniform dash sizes.

AB - Temperature-dependent intrinsic modulation response of InAs/InAlGaAs quantum-dash lasers was investigated by using pulse optical injection modulation to minimize the effects of parasitics and self-heating. Compared to typical quantum-well lasers, the quantum-dash lasers were found to have comparable differential gain but approximately twice the gain compression factor, probably due to carrier heating by free-carrier absorption, as opposed to stimulated transition. Therefore, the narrower modulation bandwidth of the quantum-dash lasers than that of quantum-well lasers was attributed to their higher gain compression factor. In addition, as expected, quantum-dash lasers with relatively long and uniform dashes exhibit higher temperature stability than quantum-well lasers. However, the lasers with relatively short and nonuniform dashes exhibit stronger temperature dependence, probably due to their higher surface-to-volume ratio and nonuniform dash sizes.

KW - Differential gain

KW - microwave modulation

KW - optical modulation

KW - quantum wells

KW - quantum wires

KW - semiconductor lasers

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Intrinsic dynamics of quantum-dash lasers

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Keywords

ASJC Scopus subject areas

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