Interlayer Exciton Diode and Transistor

Daniel N. Shanks, Fateme Mahdikhanysarvejahany, Trevor G. Stanfill, Michael R. Koehler, David G. Mandrus, Takashi Taniguchi, Kenji Watanabe, Brian J. Leroy, John R. Schaibley

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

Controlling the flow of charge neutral interlayer exciton (IX) quasiparticles can potentially lead to low loss excitonic circuits. Here, we report unidirectional transport of IXs along nanoscale electrostatically defined channels in an MoSe2-WSe2heterostructure. These results are enabled by a lithographically defined triangular etch in a graphene gate to create a potential energy "slide". By performing spatially and temporally resolved photoluminescence measurements, we measure smoothly varying IX energy along the structure and high speed exciton flow with a drift velocity up to 2 × 106cm/s, an order of magnitude larger than previous experiments. Furthermore, exciton flow can be controlled by saturating exciton population in the channel using a second laser pulse, demonstrating an optically gated excitonic transistor. Our work paves the way toward low loss excitonic circuits, the study of bosonic transport in one-dimensional channels, and custom potential energy landscapes for excitons in van der Waals heterostructures.

Original languageEnglish (US)
Pages (from-to)6599-6605
Number of pages7
JournalNano Letters
Volume22
Issue number16
DOIs
StatePublished - Aug 24 2022

Keywords

  • Excitonic Circuits
  • Interlayer Excitons
  • Nanopatterning
  • Transition Metal Dichalcogenides
  • van der Waals Heterostructures

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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