Interband transitions of quantum wells and device structures containing Ga(N, As) and (Ga, In)(N, As)

P. J. Klar, H. Grüning, W. Heimbrodt, G. Weiser, J. Koch, K. Volz, W. Stolz, S. W. Koch, S. Tomic, S. A. Choulis, T. J.C. Hosea, E. P. O'Reilly, M. Hofmann, J. Hader, J. V. Moloney

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