Interactions of moisture and organic contaminants with SiO                         2                          and ZrO                         2                          gate dielectric films

Niraj Rana; Prashant Raghu; Eric Shero; Farhang Shadman

doi:10.1016/S0169-4332(02)01014-0

Interactions of moisture and organic contaminants with SiO ₂ and ZrO ₂ gate dielectric films

Niraj Rana, Prashant Raghu, Eric Shero, Farhang Shadman

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

Zirconium oxide (ZrO ₂ ) is a promising candidate for future high-k gate dielectric applications. Atmospheric molecular contaminants may impact the quality and performance of zirconium oxide thin films. The interaction of moisture and organics (in particular IPA) as common interfacial contaminants with a 5nm ZrO ₂ film deposited by ALCVD™ is investigated using atmospheric pressure ionization mass spectrometry (APIMS); the kinetics and mechanism are compared to that of silicon oxide (SiO ₂ ). The ZrO ₂ surface was found to have a higher affinity for moisture and IPA than SiO ₂ . Under similar conditions, the amounts of moisture and IPA adsorbed on ZrO ₂ were comparatively greater and more temperature sensitive than on SiO ₂ . ZrO ₂ films also retained a significant amount of moisture that could prove detrimental during subsequent thermal processing. At high temperatures, ZrO ₂ was found to catalyze decomposition of IPA. IPA adsorption on SiO ₂ was increased by pre-adsorbed moisture and it led to the formation of alkoxy groups at elevated temperatures. On the other hand, adsorption on ZrO ₂ was site limited; consequently, less IPA was adsorbed in presence of pre-adsorbed moisture.

Original language	English (US)
Pages (from-to)	160-175
Number of pages	16
Journal	Applied Surface Science
Volume	205
Issue number	1-4
DOIs	https://doi.org/10.1016/S0169-4332(02)01014-0
State	Published - Jan 31 2002

Keywords

Adsorption
Chemisorption
Desorption
Gate dielectrics
Isopropanol
Kinetics
Moisture
Silicon oxide
Zirconium oxide

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/S0169-4332(02)01014-0

Cite this

Rana, N., Raghu, P., Shero, E., & Shadman, F. (2002). Interactions of moisture and organic contaminants with SiO ₂ and ZrO ₂ gate dielectric films Applied Surface Science, 205(1-4), 160-175. https://doi.org/10.1016/S0169-4332(02)01014-0

Interactions of moisture and organic contaminants with SiO ₂ and ZrO ₂ gate dielectric films . / Rana, Niraj; Raghu, Prashant; Shero, Eric et al.
In: Applied Surface Science, Vol. 205, No. 1-4, 31.01.2002, p. 160-175.

Research output: Contribution to journal › Article › peer-review

Rana, N, Raghu, P, Shero, E & Shadman, F 2002, ' Interactions of moisture and organic contaminants with SiO ₂ and ZrO ₂ gate dielectric films ', Applied Surface Science, vol. 205, no. 1-4, pp. 160-175. https://doi.org/10.1016/S0169-4332(02)01014-0

@article{d14019bb3087400287dd83ee9e1e2b30,

title = " Interactions of moisture and organic contaminants with SiO 2 and ZrO 2 gate dielectric films ",

abstract = " Zirconium oxide (ZrO 2 ) is a promising candidate for future high-k gate dielectric applications. Atmospheric molecular contaminants may impact the quality and performance of zirconium oxide thin films. The interaction of moisture and organics (in particular IPA) as common interfacial contaminants with a 5nm ZrO 2 film deposited by ALCVD{\texttrademark} is investigated using atmospheric pressure ionization mass spectrometry (APIMS); the kinetics and mechanism are compared to that of silicon oxide (SiO 2 ). The ZrO 2 surface was found to have a higher affinity for moisture and IPA than SiO 2 . Under similar conditions, the amounts of moisture and IPA adsorbed on ZrO 2 were comparatively greater and more temperature sensitive than on SiO 2 . ZrO 2 films also retained a significant amount of moisture that could prove detrimental during subsequent thermal processing. At high temperatures, ZrO 2 was found to catalyze decomposition of IPA. IPA adsorption on SiO 2 was increased by pre-adsorbed moisture and it led to the formation of alkoxy groups at elevated temperatures. On the other hand, adsorption on ZrO 2 was site limited; consequently, less IPA was adsorbed in presence of pre-adsorbed moisture.",

keywords = "Adsorption, Chemisorption, Desorption, Gate dielectrics, Isopropanol, Kinetics, Moisture, Silicon oxide, Zirconium oxide",

author = "Niraj Rana and Prashant Raghu and Eric Shero and Farhang Shadman",

year = "2002",

month = jan,

day = "31",

doi = "10.1016/S0169-4332(02)01014-0",

language = "English (US)",

volume = "205",

pages = "160--175",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

number = "1-4",

}

TY - JOUR

T1 - Interactions of moisture and organic contaminants with SiO 2 and ZrO 2 gate dielectric films

AU - Rana, Niraj

AU - Raghu, Prashant

AU - Shero, Eric

AU - Shadman, Farhang

PY - 2002/1/31

Y1 - 2002/1/31

N2 - Zirconium oxide (ZrO 2 ) is a promising candidate for future high-k gate dielectric applications. Atmospheric molecular contaminants may impact the quality and performance of zirconium oxide thin films. The interaction of moisture and organics (in particular IPA) as common interfacial contaminants with a 5nm ZrO 2 film deposited by ALCVD™ is investigated using atmospheric pressure ionization mass spectrometry (APIMS); the kinetics and mechanism are compared to that of silicon oxide (SiO 2 ). The ZrO 2 surface was found to have a higher affinity for moisture and IPA than SiO 2 . Under similar conditions, the amounts of moisture and IPA adsorbed on ZrO 2 were comparatively greater and more temperature sensitive than on SiO 2 . ZrO 2 films also retained a significant amount of moisture that could prove detrimental during subsequent thermal processing. At high temperatures, ZrO 2 was found to catalyze decomposition of IPA. IPA adsorption on SiO 2 was increased by pre-adsorbed moisture and it led to the formation of alkoxy groups at elevated temperatures. On the other hand, adsorption on ZrO 2 was site limited; consequently, less IPA was adsorbed in presence of pre-adsorbed moisture.

AB - Zirconium oxide (ZrO 2 ) is a promising candidate for future high-k gate dielectric applications. Atmospheric molecular contaminants may impact the quality and performance of zirconium oxide thin films. The interaction of moisture and organics (in particular IPA) as common interfacial contaminants with a 5nm ZrO 2 film deposited by ALCVD™ is investigated using atmospheric pressure ionization mass spectrometry (APIMS); the kinetics and mechanism are compared to that of silicon oxide (SiO 2 ). The ZrO 2 surface was found to have a higher affinity for moisture and IPA than SiO 2 . Under similar conditions, the amounts of moisture and IPA adsorbed on ZrO 2 were comparatively greater and more temperature sensitive than on SiO 2 . ZrO 2 films also retained a significant amount of moisture that could prove detrimental during subsequent thermal processing. At high temperatures, ZrO 2 was found to catalyze decomposition of IPA. IPA adsorption on SiO 2 was increased by pre-adsorbed moisture and it led to the formation of alkoxy groups at elevated temperatures. On the other hand, adsorption on ZrO 2 was site limited; consequently, less IPA was adsorbed in presence of pre-adsorbed moisture.

KW - Adsorption

KW - Chemisorption

KW - Desorption

KW - Gate dielectrics

KW - Isopropanol

KW - Kinetics

KW - Moisture

KW - Silicon oxide

KW - Zirconium oxide

UR - http://www.scopus.com/inward/record.url?scp=0037204370&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037204370&partnerID=8YFLogxK

U2 - 10.1016/S0169-4332(02)01014-0

DO - 10.1016/S0169-4332(02)01014-0

M3 - Article

AN - SCOPUS:0037204370

SN - 0169-4332

VL - 205

SP - 160

EP - 175

JO - Applied Surface Science

JF - Applied Surface Science

IS - 1-4

ER -