@inproceedings{3803a9ac17364dcc91f939f52101ee88,
title = "Interaction between wafer cleanliness and wafer effects",
abstract = "In this paper the effect of Fe, on gate oxide integrity (GOI) is discussed. It is demonstrated that the effect of Fe on GOI is strongly dependent on the silicon substrate. Therefore different kinds of wafers have been used. Whereas the Fe-contaminated wafers show circular patterns of degraded GOI performance, such patterns could not be observed on clean reference wafers. The GOI performance of the Fe-contaminated wafers is described using a new comprehensive statistical model.",
author = "Mertens, {P. W.} and M. Meuris and Schmidt, {H. F.} and S. Verhaverbeke and Heyns, {M. M.} and D. Graef and A. Schnegg and M. Kubota and K. Dillenbeck and A. Philipossian",
year = "1993",
language = "English (US)",
isbn = "1877862193",
series = "Proceedings, Annual Technical Meeting - Institute of Environmental Sciences",
publisher = "Publ by Inst of Environmental Sciences",
pages = "231--237",
editor = "Anon",
booktitle = "Proceedings, Annual Technical Meeting - Institute of Environmental Sciences",
note = "Proceedings of the 39th Annual Technical Meeting of Institute of Environmental Sciences ; Conference date: 02-05-1993 Through 07-05-1993",
}