Integration of a CdTe interdigitated photoconductor with AlGaAs field-effect transistor

J. L. Filippozzi, F. Therez, D. Estève, M. Fallahi, D. Kendil, M. Da Silva, M. Barbe, G. Cohen-Solal

Research output: Contribution to journalArticlepeer-review

11 Scopus citations


A device associating a GaAs/GaAlAs heterojunction FET with a CdTe photoconductor is presented. FET optimization criteria yielding maximum transconductance have been determined and the Cgs/Gm ratio has been evaluated. The successive technological steps highlight the thermal compatibility of the method of fabrication. The dimensions of our transistor are as follows: 5 μm X 350 μm gate length and width respectively. The photoconductor with an area of 100 μm X 100 μm has three sets of interdigitated ohmic contacts with 10 μm spacing between the fingers. FET transconductance values over 25 mS/mm have been achieved. The integrated circuit presents a responsivity Iout/Popt as high as 30 A/W while that of the photoconductor is 2 A/W at 4 V gate bias. The Hall measurement of the CdTe layer gives a mobility of 270 cm2/V·s at room temperature and a resistivity of 100 Ω cm.

Original languageEnglish (US)
Pages (from-to)1013-1017
Number of pages5
JournalJournal of Crystal Growth
Issue number1-4
StatePublished - Apr 1 1990

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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