Integrated optoelectronic circuits with InP-based HBTs

D. Yap; Y. K. Brown; R. H. Walden; T. P.E. Broekaert; K. R. Elliott; M. W. Yung; D. L. Persechini; W. W. Ng; A. R. Kost

doi:10.1117/12.426901

Integrated optoelectronic circuits with InP-based HBTs

D. Yap, Y. K. Brown, R. H. Walden, T. P.E. Broekaert, K. R. Elliott, M. W. Yung, D. L. Persechini, W. W. Ng, A. R. Kost

Optical Sciences

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Integrated optoelectronic circuits that are capable of very high speeds or high functionality have been demonstrated using InP-based heterojunction bipolar transistors (HBTs). Optoelectronic receivers contain photodetectors fabricated from the same epitaxial material structure as the HBTs. High-functionality digital receivers, analog receiver arrays as well as analog-to-digital converters have been realized. Optoelectronic modulation circuits for signal transmission also contain separately grown, surface-coupled multiple-quantum-well (MQW) modulators.

Original language	English (US)
Pages (from-to)	1-11
Number of pages	11
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4290
DOIs	https://doi.org/10.1117/12.426901
State	Published - 2001

Keywords

Heterojunction-bipolar transistors
Modulators
Optoelectronics
Receivers

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.426901

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title = "Integrated optoelectronic circuits with InP-based HBTs",

abstract = "Integrated optoelectronic circuits that are capable of very high speeds or high functionality have been demonstrated using InP-based heterojunction bipolar transistors (HBTs). Optoelectronic receivers contain photodetectors fabricated from the same epitaxial material structure as the HBTs. High-functionality digital receivers, analog receiver arrays as well as analog-to-digital converters have been realized. Optoelectronic modulation circuits for signal transmission also contain separately grown, surface-coupled multiple-quantum-well (MQW) modulators.",

keywords = "Heterojunction-bipolar transistors, Modulators, Optoelectronics, Receivers",

author = "D. Yap and Brown, {Y. K.} and Walden, {R. H.} and Broekaert, {T. P.E.} and Elliott, {K. R.} and Yung, {M. W.} and Persechini, {D. L.} and Ng, {W. W.} and Kost, {A. R.}",

year = "2001",

doi = "10.1117/12.426901",

language = "English (US)",

volume = "4290",

pages = "1--11",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

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TY - JOUR

T1 - Integrated optoelectronic circuits with InP-based HBTs

AU - Yap, D.

AU - Brown, Y. K.

AU - Walden, R. H.

AU - Broekaert, T. P.E.

AU - Elliott, K. R.

AU - Yung, M. W.

AU - Persechini, D. L.

AU - Ng, W. W.

AU - Kost, A. R.

PY - 2001

Y1 - 2001

N2 - Integrated optoelectronic circuits that are capable of very high speeds or high functionality have been demonstrated using InP-based heterojunction bipolar transistors (HBTs). Optoelectronic receivers contain photodetectors fabricated from the same epitaxial material structure as the HBTs. High-functionality digital receivers, analog receiver arrays as well as analog-to-digital converters have been realized. Optoelectronic modulation circuits for signal transmission also contain separately grown, surface-coupled multiple-quantum-well (MQW) modulators.

AB - Integrated optoelectronic circuits that are capable of very high speeds or high functionality have been demonstrated using InP-based heterojunction bipolar transistors (HBTs). Optoelectronic receivers contain photodetectors fabricated from the same epitaxial material structure as the HBTs. High-functionality digital receivers, analog receiver arrays as well as analog-to-digital converters have been realized. Optoelectronic modulation circuits for signal transmission also contain separately grown, surface-coupled multiple-quantum-well (MQW) modulators.

KW - Heterojunction-bipolar transistors

KW - Modulators

KW - Optoelectronics

KW - Receivers

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JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

ER -

Integrated optoelectronic circuits with InP-based HBTs

Abstract

Keywords

ASJC Scopus subject areas

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