Integrated optoelectronic circuits with InP-based HBTs

D. Yap, Y. K. Brown, R. H. Walden, T. P.E. Broekaert, K. R. Elliott, M. W. Yung, D. L. Persechini, W. W. Ng, A. R. Kost

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


Integrated optoelectronic circuits that are capable of very high speeds or high functionality have been demonstrated using InP-based heterojunction bipolar transistors (HBTs). Optoelectronic receivers contain photodetectors fabricated from the same epitaxial material structure as the HBTs. High-functionality digital receivers, analog receiver arrays as well as analog-to-digital converters have been realized. Optoelectronic modulation circuits for signal transmission also contain separately grown, surface-coupled multiple-quantum-well (MQW) modulators.

Original languageEnglish (US)
Pages (from-to)1-11
Number of pages11
JournalProceedings of SPIE - The International Society for Optical Engineering
StatePublished - 2001


  • Heterojunction-bipolar transistors
  • Modulators
  • Optoelectronics
  • Receivers

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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