InGaAs/InGaAsP integrated tunable detector grown by chemical beam epitaxy

F. S. Choa; W. T. Tsang; R. A. Logan; R. P. Gnall; T. L. Koch; C. A. Burrus; M. C. Wu; Y. K. Chen; R. Kapre

doi:10.1063/1.110678

InGaAs/InGaAsP integrated tunable detector grown by chemical beam epitaxy

F. S. Choa, W. T. Tsang, R. A. Logan, R. P. Gnall, T. L. Koch, C. A. Burrus, M. C. Wu, Y. K. Chen, R. Kapre

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

By controlling the thickness of the grating depth with chemical beam epitaxy (CBE) growth time, we report in this letter the design and performance of an integrated tunable detector. A carefully designed tunable active filter, which allows only one below threshold Fabry-Perot mode for operation, is integrated with a waveguide detector. The full tuning range of this kind of tunable device can now be utilized for system applications.

Original language	English (US)
Pages (from-to)	1836-1838
Number of pages	3
Journal	Applied Physics Letters
Volume	63
Issue number	13
DOIs	https://doi.org/10.1063/1.110678
State	Published - 1993
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.110678

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title = "InGaAs/InGaAsP integrated tunable detector grown by chemical beam epitaxy",

abstract = "By controlling the thickness of the grating depth with chemical beam epitaxy (CBE) growth time, we report in this letter the design and performance of an integrated tunable detector. A carefully designed tunable active filter, which allows only one below threshold Fabry-Perot mode for operation, is integrated with a waveguide detector. The full tuning range of this kind of tunable device can now be utilized for system applications.",

author = "Choa, {F. S.} and Tsang, {W. T.} and Logan, {R. A.} and Gnall, {R. P.} and Koch, {T. L.} and Burrus, {C. A.} and Wu, {M. C.} and Chen, {Y. K.} and R. Kapre",

year = "1993",

doi = "10.1063/1.110678",

language = "English (US)",

volume = "63",

pages = "1836--1838",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - InGaAs/InGaAsP integrated tunable detector grown by chemical beam epitaxy

AU - Choa, F. S.

AU - Tsang, W. T.

AU - Logan, R. A.

AU - Gnall, R. P.

AU - Koch, T. L.

AU - Burrus, C. A.

AU - Wu, M. C.

AU - Chen, Y. K.

AU - Kapre, R.

PY - 1993

Y1 - 1993

N2 - By controlling the thickness of the grating depth with chemical beam epitaxy (CBE) growth time, we report in this letter the design and performance of an integrated tunable detector. A carefully designed tunable active filter, which allows only one below threshold Fabry-Perot mode for operation, is integrated with a waveguide detector. The full tuning range of this kind of tunable device can now be utilized for system applications.

AB - By controlling the thickness of the grating depth with chemical beam epitaxy (CBE) growth time, we report in this letter the design and performance of an integrated tunable detector. A carefully designed tunable active filter, which allows only one below threshold Fabry-Perot mode for operation, is integrated with a waveguide detector. The full tuning range of this kind of tunable device can now be utilized for system applications.

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DO - 10.1063/1.110678

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

ER -

InGaAs/InGaAsP integrated tunable detector grown by chemical beam epitaxy

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