Abstract
The effects of the processing conditions on the formation of buried oxide (BOX) layers in low-dose low-energy separation by implanted oxygen materials were investigated by using infrared spectroscopy and transmission electron microscopy. In as-implanted samples, the Si-O-Si stretching frequency increases either with increasing the oxygen dose or with decreasing implantation energy because the oxide composition becomes stoichiometric. However, the plateau frequencies were observed above a certain dose due to the compressive stress in the BOX layers. Upon ramping up to 1100 °C, the compressive stress decreases. Annealing beyond 1100 °C, the out diffusion of oxygen atoms was detected.
Original language | English (US) |
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Pages (from-to) | 303-311 |
Number of pages | 9 |
Journal | Thin Solid Films |
Volume | 476 |
Issue number | 2 |
DOIs | |
State | Published - Apr 8 2005 |
Keywords
- Infrared spectroscopy
- Separation by implanted oxygen materials
- Silicon oxide
- Transmission electron microscopy
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry