Infrared reflection-absorption spectroscope using thin film structures

S. J. Finke; G. L. Schrader

doi:10.1016/0584-8539(93)80016-4

Infrared reflection-absorption spectroscope using thin film structures

S. J. Finke, G. L. Schrader

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

Infrared reflection-absorption spectroscopy (IRRAS) has been used extensively in the study of adsorbates and thin layers on metal surfaces, but little work has been performed on non-metals due to the low sensitivity which results when these materials are used. In this work, thin film structures consisting of a thin layer of a semiconductor (silicon) on a metal (copper) surface are used to increase the sensitivity of the technique for examining layers of poly(methylmethacrylate).

Original language	English (US)
Pages (from-to)	91-96
Number of pages	6
Journal	Spectrochimica Acta Part A: Molecular Spectroscopy
Volume	46
Issue number	1
DOIs	https://doi.org/10.1016/0584-8539(93)80016-4
State	Published - 1990
Externally published	Yes

ASJC Scopus subject areas

General Engineering

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title = "Infrared reflection-absorption spectroscope using thin film structures",

abstract = "Infrared reflection-absorption spectroscopy (IRRAS) has been used extensively in the study of adsorbates and thin layers on metal surfaces, but little work has been performed on non-metals due to the low sensitivity which results when these materials are used. In this work, thin film structures consisting of a thin layer of a semiconductor (silicon) on a metal (copper) surface are used to increase the sensitivity of the technique for examining layers of poly(methylmethacrylate).",

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year = "1990",

doi = "10.1016/0584-8539(93)80016-4",

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AU - Schrader, G. L.

PY - 1990

Y1 - 1990

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AB - Infrared reflection-absorption spectroscopy (IRRAS) has been used extensively in the study of adsorbates and thin layers on metal surfaces, but little work has been performed on non-metals due to the low sensitivity which results when these materials are used. In this work, thin film structures consisting of a thin layer of a semiconductor (silicon) on a metal (copper) surface are used to increase the sensitivity of the technique for examining layers of poly(methylmethacrylate).

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Infrared reflection-absorption spectroscope using thin film structures

Abstract

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