Influence of the valenceband offset on absorption and gain in GaAs/GaNAs quantum wells

J. Hader; S. W. Koch; J. V. Moloney; E. P. O'Reilly

doi:10.1109/cleo.2000.906879

Influence of the valenceband offset on absorption and gain in GaAs/GaNAs quantum wells

J. Hader, S. W. Koch, J. V. Moloney, E. P. O'Reilly

Research output: Contribution to conference › Paper › peer-review

Abstract

This study demonstrates that gain-spectra could serve an unequivocal measure for the existence of a nonzero valenceband offset on GaAs/GaNAs quantum well structures. Gain spectra are calculated for different valenceband offsets.

Original language	English (US)
Pages	176-177
Number of pages	2
DOIs	https://doi.org/10.1109/cleo.2000.906879
State	Published - 2000
Externally published	Yes
Event	Conference on Lasers and Electro-Optics (CLEO 2000) - San Francisco, CA, USA Duration: May 7 2000 → May 12 2000

Other

Other	Conference on Lasers and Electro-Optics (CLEO 2000)
City	San Francisco, CA, USA
Period	5/7/00 → 5/12/00

ASJC Scopus subject areas

General Physics and Astronomy

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10.1109/cleo.2000.906879

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@conference{c262e365465c485c9f20dda166aa6a5e,

title = "Influence of the valenceband offset on absorption and gain in GaAs/GaNAs quantum wells",

abstract = "This study demonstrates that gain-spectra could serve an unequivocal measure for the existence of a nonzero valenceband offset on GaAs/GaNAs quantum well structures. Gain spectra are calculated for different valenceband offsets.",

author = "J. Hader and Koch, {S. W.} and Moloney, {J. V.} and O'Reilly, {E. P.}",

year = "2000",

doi = "10.1109/cleo.2000.906879",

language = "English (US)",

pages = "176--177",

note = "Conference on Lasers and Electro-Optics (CLEO 2000) ; Conference date: 07-05-2000 Through 12-05-2000",

}

TY - CONF

T1 - Influence of the valenceband offset on absorption and gain in GaAs/GaNAs quantum wells

AU - Hader, J.

AU - Koch, S. W.

AU - Moloney, J. V.

AU - O'Reilly, E. P.

PY - 2000

Y1 - 2000

N2 - This study demonstrates that gain-spectra could serve an unequivocal measure for the existence of a nonzero valenceband offset on GaAs/GaNAs quantum well structures. Gain spectra are calculated for different valenceband offsets.

AB - This study demonstrates that gain-spectra could serve an unequivocal measure for the existence of a nonzero valenceband offset on GaAs/GaNAs quantum well structures. Gain spectra are calculated for different valenceband offsets.

UR - http://www.scopus.com/inward/record.url?scp=0034547298&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034547298&partnerID=8YFLogxK

U2 - 10.1109/cleo.2000.906879

DO - 10.1109/cleo.2000.906879

M3 - Paper

AN - SCOPUS:0034547298

SP - 176

EP - 177

T2 - Conference on Lasers and Electro-Optics (CLEO 2000)

Y2 - 7 May 2000 through 12 May 2000

ER -

Influence of the valenceband offset on absorption and gain in GaAs/GaNAs quantum wells

Abstract

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