Influence of the valence-band offset on gain and absorption in GaNAs/GaAs quantum well lasers

J. Hader; S. W. Koch; J. V. Moloney; E. P. O'Reilly

doi:10.1063/1.126749

Influence of the valence-band offset on gain and absorption in GaNAs/GaAs quantum well lasers

J. Hader, S. W. Koch, J. V. Moloney, E. P. O'Reilly

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54 Scopus citations

Abstract

The dependence of the gain and absorption in GaNAs/GaAs quantum well lasers on the valence-band offset is investigated. The calculated absorption strength, gain amplitudes, and gain bandwidth are found to depend crucially on the value of this offset. The shift of the peak gain transition energy with carrier density is shown to depend strongly on the magnitude of the offset, providing what should be a useful means to determine the offset experimentally.

Original language	English (US)
Pages (from-to)	3685-3687
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	25
DOIs	https://doi.org/10.1063/1.126749
State	Published - Jun 19 2000

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{8ed791b3bcc34124afbedf8dfd459101,

title = "Influence of the valence-band offset on gain and absorption in GaNAs/GaAs quantum well lasers",

abstract = "The dependence of the gain and absorption in GaNAs/GaAs quantum well lasers on the valence-band offset is investigated. The calculated absorption strength, gain amplitudes, and gain bandwidth are found to depend crucially on the value of this offset. The shift of the peak gain transition energy with carrier density is shown to depend strongly on the magnitude of the offset, providing what should be a useful means to determine the offset experimentally.",

author = "J. Hader and Koch, {S. W.} and Moloney, {J. V.} and O'Reilly, {E. P.}",

year = "2000",

month = jun,

day = "19",

doi = "10.1063/1.126749",

language = "English (US)",

volume = "76",

pages = "3685--3687",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "25",

}

TY - JOUR

T1 - Influence of the valence-band offset on gain and absorption in GaNAs/GaAs quantum well lasers

AU - Hader, J.

AU - Koch, S. W.

AU - Moloney, J. V.

AU - O'Reilly, E. P.

PY - 2000/6/19

Y1 - 2000/6/19

N2 - The dependence of the gain and absorption in GaNAs/GaAs quantum well lasers on the valence-band offset is investigated. The calculated absorption strength, gain amplitudes, and gain bandwidth are found to depend crucially on the value of this offset. The shift of the peak gain transition energy with carrier density is shown to depend strongly on the magnitude of the offset, providing what should be a useful means to determine the offset experimentally.

AB - The dependence of the gain and absorption in GaNAs/GaAs quantum well lasers on the valence-band offset is investigated. The calculated absorption strength, gain amplitudes, and gain bandwidth are found to depend crucially on the value of this offset. The shift of the peak gain transition energy with carrier density is shown to depend strongly on the magnitude of the offset, providing what should be a useful means to determine the offset experimentally.

UR - http://www.scopus.com/inward/record.url?scp=0000335272&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000335272&partnerID=8YFLogxK

U2 - 10.1063/1.126749

DO - 10.1063/1.126749

M3 - Article

AN - SCOPUS:0000335272

SN - 0003-6951

VL - 76

SP - 3685

EP - 3687

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

ER -

Influence of the valence-band offset on gain and absorption in GaNAs/GaAs quantum well lasers

Abstract

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