Fully microscopic models are used to investigate the structural dependence of InGaNGaN quantum-well semiconductor-laser gain media. Due to the inherent piezoelectric fields, the amplitudes and spectral positions of gain and spontaneous emission strongly depend on the structural details. It is shown how quantitative experiment/theory comparisons can be used to determine the fields. As a general trend, it is found that the loss current due to spontaneous emission at threshold decreases with well width and indium composition.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)