Influence of internal fields on gain and spontaneous emission in InGaN quantum wells

J. Hader; J. V. Moloney; S. W. Koch

doi:10.1063/1.2372443

Influence of internal fields on gain and spontaneous emission in InGaN quantum wells

J. Hader, J. V. Moloney, S. W. Koch

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Abstract

Fully microscopic models are used to investigate the structural dependence of InGaNGaN quantum-well semiconductor-laser gain media. Due to the inherent piezoelectric fields, the amplitudes and spectral positions of gain and spontaneous emission strongly depend on the structural details. It is shown how quantitative experiment/theory comparisons can be used to determine the fields. As a general trend, it is found that the loss current due to spontaneous emission at threshold decreases with well width and indium composition.

Original language	English (US)
Article number	171120
Journal	Applied Physics Letters
Volume	89
Issue number	17
DOIs	https://doi.org/10.1063/1.2372443
State	Published - 2006

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Influence of internal fields on gain and spontaneous emission in InGaN quantum wells",

abstract = "Fully microscopic models are used to investigate the structural dependence of InGaNGaN quantum-well semiconductor-laser gain media. Due to the inherent piezoelectric fields, the amplitudes and spectral positions of gain and spontaneous emission strongly depend on the structural details. It is shown how quantitative experiment/theory comparisons can be used to determine the fields. As a general trend, it is found that the loss current due to spontaneous emission at threshold decreases with well width and indium composition.",

author = "J. Hader and Moloney, {J. V.} and Koch, {S. W.}",

note = "Funding Information: This work was supported by the U.S. Air Force Office of Scientific Research, Contract No. F49620-02-1-0380, by the Deutsche Forschungsgemeinschaft, and the Humboldt Foundation. NLCST acknowledges support through a Phase I STTR Contract No. FA9550-05-C-0069.",

year = "2006",

doi = "10.1063/1.2372443",

language = "English (US)",

volume = "89",

journal = "Applied Physics Letters",

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T1 - Influence of internal fields on gain and spontaneous emission in InGaN quantum wells

AU - Hader, J.

AU - Moloney, J. V.

AU - Koch, S. W.

N1 - Funding Information: This work was supported by the U.S. Air Force Office of Scientific Research, Contract No. F49620-02-1-0380, by the Deutsche Forschungsgemeinschaft, and the Humboldt Foundation. NLCST acknowledges support through a Phase I STTR Contract No. FA9550-05-C-0069.

PY - 2006

Y1 - 2006

N2 - Fully microscopic models are used to investigate the structural dependence of InGaNGaN quantum-well semiconductor-laser gain media. Due to the inherent piezoelectric fields, the amplitudes and spectral positions of gain and spontaneous emission strongly depend on the structural details. It is shown how quantitative experiment/theory comparisons can be used to determine the fields. As a general trend, it is found that the loss current due to spontaneous emission at threshold decreases with well width and indium composition.

AB - Fully microscopic models are used to investigate the structural dependence of InGaNGaN quantum-well semiconductor-laser gain media. Due to the inherent piezoelectric fields, the amplitudes and spectral positions of gain and spontaneous emission strongly depend on the structural details. It is shown how quantitative experiment/theory comparisons can be used to determine the fields. As a general trend, it is found that the loss current due to spontaneous emission at threshold decreases with well width and indium composition.

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DO - 10.1063/1.2372443

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VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

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ER -

Influence of internal fields on gain and spontaneous emission in InGaN quantum wells

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