Influence of growth conditions on the optical gain of 1.3 μm (GaIn)(NAs)/GaAs lasers

N. Gerhardt; M. Hofmann; K. Handtke; W. Stolz; S. W. Koch; J. Hader; J. V. Moloney; A. Yu Egorov; H. Riechert

Influence of growth conditions on the optical gain of 1.3 μm (GaIn)(NAs)/GaAs lasers

N. Gerhardt, M. Hofmann, K. Handtke, W. Stolz, S. W. Koch, J. Hader, J. V. Moloney, A. Yu Egorov, H. Riechert

Research output: Contribution to journal › Conference article › peer-review

Abstract

The optical gain of (GaIn)(NAs)/GaAs laser structures were investigated. It was demonstrated that the gain critically depended on the growth conditions. The results showed that the relaxation between the different transitions were weak and this confirmed the model of spatially separated transitions.

Original language	English (US)
Pages (from-to)	85-86
Number of pages	2
Journal	Conference Digest - IEEE International Semiconductor Laser Conference
State	Published - 2002
Event	2002 IEEE 18th International Semiconductor Laser Conference: Conference Digest - Garmish, Germany Duration: Sep 29 2002 → Oct 3 2002

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Cite this

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title = "Influence of growth conditions on the optical gain of 1.3 μm (GaIn)(NAs)/GaAs lasers",

abstract = "The optical gain of (GaIn)(NAs)/GaAs laser structures were investigated. It was demonstrated that the gain critically depended on the growth conditions. The results showed that the relaxation between the different transitions were weak and this confirmed the model of spatially separated transitions.",

author = "N. Gerhardt and M. Hofmann and K. Handtke and W. Stolz and Koch, {S. W.} and J. Hader and Moloney, {J. V.} and Egorov, {A. Yu} and H. Riechert",

year = "2002",

language = "English (US)",

pages = "85--86",

journal = "Conference Digest - IEEE International Semiconductor Laser Conference",

issn = "0899-9406",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2002 IEEE 18th International Semiconductor Laser Conference: Conference Digest ; Conference date: 29-09-2002 Through 03-10-2002",

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TY - JOUR

T1 - Influence of growth conditions on the optical gain of 1.3 μm (GaIn)(NAs)/GaAs lasers

AU - Gerhardt, N.

AU - Hofmann, M.

AU - Handtke, K.

AU - Stolz, W.

AU - Koch, S. W.

AU - Hader, J.

AU - Moloney, J. V.

AU - Egorov, A. Yu

AU - Riechert, H.

PY - 2002

Y1 - 2002

N2 - The optical gain of (GaIn)(NAs)/GaAs laser structures were investigated. It was demonstrated that the gain critically depended on the growth conditions. The results showed that the relaxation between the different transitions were weak and this confirmed the model of spatially separated transitions.

AB - The optical gain of (GaIn)(NAs)/GaAs laser structures were investigated. It was demonstrated that the gain critically depended on the growth conditions. The results showed that the relaxation between the different transitions were weak and this confirmed the model of spatially separated transitions.

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M3 - Conference article

AN - SCOPUS:0036452414

SN - 0899-9406

SP - 85

EP - 86

JO - Conference Digest - IEEE International Semiconductor Laser Conference

JF - Conference Digest - IEEE International Semiconductor Laser Conference

T2 - 2002 IEEE 18th International Semiconductor Laser Conference: Conference Digest

Y2 - 29 September 2002 through 3 October 2002

ER -

Influence of growth conditions on the optical gain of 1.3 μm (GaIn)(NAs)/GaAs lasers

Abstract

ASJC Scopus subject areas

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