Influence of erbium doping on structure and optical properties of the InGaAs/GaAs superlattices

The In_xGa_1-xAs/GaAs structures at x = 0.1 - 0.2 doped with erbium have been prepared by MBE method. The Er concentration is equal to (2-3)10¹⁹ cm^-3 The SIMS measurements have shown that maximum of the erbium concentration takes place at the heterobounders. Accordingly to the X-ray studies doped structures are more perfective than undoped ones and a density of misfit dislocations is less in structures doped with erbium than in undoped superlattices The spectra of optical absorption of these structures have been investigated, and their energy diagrams have been calculated. The Er related emission at wavelength about 1.54 μm was observed in the InGaAs/GaAs:Er structures at helium temperatures.