InAs/GaAs short-period strained-layer superlattices grown on GaAs as quantum confined Stark effect modulators

Michael Jupina; Elsa Garmire; Tom C. Hasenberg; Alan Kost

doi:10.1063/1.106537

InAs/GaAs short-period strained-layer superlattices grown on GaAs as quantum confined Stark effect modulators

Michael Jupina, Elsa Garmire, Tom C. Hasenberg, Alan Kost

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We report here the first use of InAs/GaAs short-period strained-layer superlattices as Stark effect modulators. We have observed differential transmission changes as large as 38% with a corresponding change in quantum-well absorption of 0.28 μm^-1 at an applied field of 43 kV/cm. The Kramers-Kronig relation predicts a maximum change in the quantum-well index of refraction of 0.019 for a field of 43 kV/cm. There is a unique light-hole feature in the absorption and electroabsorption spectra that is attributed to resonant tunneling in the presence of high internal strain in the InAs layers.

Original language	English (US)
Pages (from-to)	686-688
Number of pages	3
Journal	Applied Physics Letters
Volume	60
Issue number	6
DOIs	https://doi.org/10.1063/1.106537
State	Published - 1992
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "InAs/GaAs short-period strained-layer superlattices grown on GaAs as quantum confined Stark effect modulators",

abstract = "We report here the first use of InAs/GaAs short-period strained-layer superlattices as Stark effect modulators. We have observed differential transmission changes as large as 38% with a corresponding change in quantum-well absorption of 0.28 μm-1 at an applied field of 43 kV/cm. The Kramers-Kronig relation predicts a maximum change in the quantum-well index of refraction of 0.019 for a field of 43 kV/cm. There is a unique light-hole feature in the absorption and electroabsorption spectra that is attributed to resonant tunneling in the presence of high internal strain in the InAs layers.",

author = "Michael Jupina and Elsa Garmire and Hasenberg, {Tom C.} and Alan Kost",

year = "1992",

doi = "10.1063/1.106537",

language = "English (US)",

volume = "60",

pages = "686--688",

journal = "Applied Physics Letters",

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T1 - InAs/GaAs short-period strained-layer superlattices grown on GaAs as quantum confined Stark effect modulators

AU - Jupina, Michael

AU - Garmire, Elsa

AU - Hasenberg, Tom C.

AU - Kost, Alan

PY - 1992

Y1 - 1992

N2 - We report here the first use of InAs/GaAs short-period strained-layer superlattices as Stark effect modulators. We have observed differential transmission changes as large as 38% with a corresponding change in quantum-well absorption of 0.28 μm-1 at an applied field of 43 kV/cm. The Kramers-Kronig relation predicts a maximum change in the quantum-well index of refraction of 0.019 for a field of 43 kV/cm. There is a unique light-hole feature in the absorption and electroabsorption spectra that is attributed to resonant tunneling in the presence of high internal strain in the InAs layers.

AB - We report here the first use of InAs/GaAs short-period strained-layer superlattices as Stark effect modulators. We have observed differential transmission changes as large as 38% with a corresponding change in quantum-well absorption of 0.28 μm-1 at an applied field of 43 kV/cm. The Kramers-Kronig relation predicts a maximum change in the quantum-well index of refraction of 0.019 for a field of 43 kV/cm. There is a unique light-hole feature in the absorption and electroabsorption spectra that is attributed to resonant tunneling in the presence of high internal strain in the InAs layers.

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DO - 10.1063/1.106537

M3 - Article

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

ER -

InAs/GaAs short-period strained-layer superlattices grown on GaAs as quantum confined Stark effect modulators

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