InAs/GaAs short-period strained-layer superlattice modulators grown using advanced digital reflection high-energy electron diffraction techniques

T. C. Hasenberg,; P. Chen; A. Madhukar; A. R. Kost; J. Visher; A. Konkar

doi:10.1016/0022-0248(95)80162-6

InAs/GaAs short-period strained-layer superlattice modulators grown using advanced digital reflection high-energy electron diffraction techniques

T. C. Hasenberg,, P. Chen, A. Madhukar, A. R. Kost, J. Visher, A. Konkar

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We report the growth optimization of multiple quantum well and modulator samples containing InAs/GaAs short-period strained-layer superlattice (SPSLS) well using our advanced digitized reflection high-energy electron diffraction (RHEED) system. Modulator samples for both 980 nm and 1.06 μm wavelengths have been investigated. Samples with narrow room temperature absorbance linewidths and rapidly decaying absorbance tails are necessary for state-of-the-art modulators. We have employed various conventional (only As shutter open) and total growth interrupt times (all shutters closed), as well as different InAs and GaAs growth rates in order to optimize the SPSLSs.

Original language	English (US)
Pages (from-to)	1368-1374
Number of pages	7
Journal	Journal of Crystal Growth
Volume	150
DOIs	https://doi.org/10.1016/0022-0248(95)80162-6
State	Published - 1995
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/0022-0248(95)80162-6

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@article{614930258eb34d3d8d6894e686d068e8,

title = "InAs/GaAs short-period strained-layer superlattice modulators grown using advanced digital reflection high-energy electron diffraction techniques",

abstract = "We report the growth optimization of multiple quantum well and modulator samples containing InAs/GaAs short-period strained-layer superlattice (SPSLS) well using our advanced digitized reflection high-energy electron diffraction (RHEED) system. Modulator samples for both 980 nm and 1.06 μm wavelengths have been investigated. Samples with narrow room temperature absorbance linewidths and rapidly decaying absorbance tails are necessary for state-of-the-art modulators. We have employed various conventional (only As shutter open) and total growth interrupt times (all shutters closed), as well as different InAs and GaAs growth rates in order to optimize the SPSLSs.",

author = "Hasenberg,, {T. C.} and P. Chen and A. Madhukar and Kost, {A. R.} and J. Visher and A. Konkar",

note = "Funding Information: This work was supported in part by ARPA contractn umberM DA 972-93-H-0005.",

year = "1995",

doi = "10.1016/0022-0248(95)80162-6",

language = "English (US)",

volume = "150",

pages = "1368--1374",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - InAs/GaAs short-period strained-layer superlattice modulators grown using advanced digital reflection high-energy electron diffraction techniques

AU - Hasenberg,, T. C.

AU - Chen, P.

AU - Madhukar, A.

AU - Kost, A. R.

AU - Visher, J.

AU - Konkar, A.

N1 - Funding Information: This work was supported in part by ARPA contractn umberM DA 972-93-H-0005.

PY - 1995

Y1 - 1995

N2 - We report the growth optimization of multiple quantum well and modulator samples containing InAs/GaAs short-period strained-layer superlattice (SPSLS) well using our advanced digitized reflection high-energy electron diffraction (RHEED) system. Modulator samples for both 980 nm and 1.06 μm wavelengths have been investigated. Samples with narrow room temperature absorbance linewidths and rapidly decaying absorbance tails are necessary for state-of-the-art modulators. We have employed various conventional (only As shutter open) and total growth interrupt times (all shutters closed), as well as different InAs and GaAs growth rates in order to optimize the SPSLSs.

AB - We report the growth optimization of multiple quantum well and modulator samples containing InAs/GaAs short-period strained-layer superlattice (SPSLS) well using our advanced digitized reflection high-energy electron diffraction (RHEED) system. Modulator samples for both 980 nm and 1.06 μm wavelengths have been investigated. Samples with narrow room temperature absorbance linewidths and rapidly decaying absorbance tails are necessary for state-of-the-art modulators. We have employed various conventional (only As shutter open) and total growth interrupt times (all shutters closed), as well as different InAs and GaAs growth rates in order to optimize the SPSLSs.

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DO - 10.1016/0022-0248(95)80162-6

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SN - 0022-0248

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SP - 1368

EP - 1374

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

InAs/GaAs short-period strained-layer superlattice modulators grown using advanced digital reflection high-energy electron diffraction techniques

Abstract

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