Importance of intramolecular electron spin relaxation in small molecule semiconductors

L. Schulz; M. Willis; L. Nuccio; P. Shusharov; S. Fratini; F. L. Pratt; W. P. Gillin; T. Kreouzis; M. Heeney; N. Stingelin; C. A. Stafford; D. J. Beesley; C. Bernhard; J. E. Anthony; I. McKenzie; J. S. Lord; A. J. Drew

doi:10.1103/PhysRevB.84.085209

Importance of intramolecular electron spin relaxation in small molecule semiconductors

L. Schulz, M. Willis, L. Nuccio, P. Shusharov, S. Fratini, F. L. Pratt, W. P. Gillin, T. Kreouzis, M. Heeney, N. Stingelin, C. A. Stafford, D. J. Beesley, C. Bernhard, J. E. Anthony, I. McKenzie, J. S. Lord, A. J. Drew

Physics

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20 Scopus citations

Abstract

Electron spin relaxation rate (eSR) is investigated on several organic semiconductors of different morphologies and molecular structures, using avoided level crossing muon spectroscopy as a local spin probe. We find that two functionalized acenes (polycrystalline tri(isopropyl)silyl-pentacene and amorphous 5,6,11,12-tetraphenyltetracene) exhibit eSRs with an Arrhenius-like temperature dependence, each with two characteristic energy scales similar to those expected from vibrations. Polycrystalline tris(8-hydroxyquinolate)gallium shows a similar behavior. The observed eSR for these molecules is no greater than 0.85 MHz at 300 K. The variety of crystal structures and transport regimes that these molecules possess, as well as the local nature of the probe, strongly suggest an intramolecular phenomenon general to many organic semiconductors, in contrast to the commonly assumed spin relaxation models based on intermolecular charge-carrier transport.

Original language	English (US)
Article number	085209
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	84
Issue number	8
DOIs	https://doi.org/10.1103/PhysRevB.84.085209
State	Published - Aug 26 2011

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.84.085209

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Schulz, L., Willis, M., Nuccio, L., Shusharov, P., Fratini, S., Pratt, F. L., Gillin, W. P., Kreouzis, T., Heeney, M., Stingelin, N., Stafford, C. A., Beesley, D. J., Bernhard, C., Anthony, J. E., McKenzie, I., Lord, J. S., & Drew, A. J. (2011). Importance of intramolecular electron spin relaxation in small molecule semiconductors. Physical Review B - Condensed Matter and Materials Physics, 84(8), Article 085209. https://doi.org/10.1103/PhysRevB.84.085209

Schulz, L, Willis, M, Nuccio, L, Shusharov, P, Fratini, S, Pratt, FL, Gillin, WP, Kreouzis, T, Heeney, M, Stingelin, N, Stafford, CA, Beesley, DJ, Bernhard, C, Anthony, JE, McKenzie, I, Lord, JS & Drew, AJ 2011, 'Importance of intramolecular electron spin relaxation in small molecule semiconductors', Physical Review B - Condensed Matter and Materials Physics, vol. 84, no. 8, 085209. https://doi.org/10.1103/PhysRevB.84.085209

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abstract = "Electron spin relaxation rate (eSR) is investigated on several organic semiconductors of different morphologies and molecular structures, using avoided level crossing muon spectroscopy as a local spin probe. We find that two functionalized acenes (polycrystalline tri(isopropyl)silyl-pentacene and amorphous 5,6,11,12-tetraphenyltetracene) exhibit eSRs with an Arrhenius-like temperature dependence, each with two characteristic energy scales similar to those expected from vibrations. Polycrystalline tris(8-hydroxyquinolate)gallium shows a similar behavior. The observed eSR for these molecules is no greater than 0.85 MHz at 300 K. The variety of crystal structures and transport regimes that these molecules possess, as well as the local nature of the probe, strongly suggest an intramolecular phenomenon general to many organic semiconductors, in contrast to the commonly assumed spin relaxation models based on intermolecular charge-carrier transport.",

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AU - Willis, M.

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AU - Pratt, F. L.

AU - Gillin, W. P.

AU - Kreouzis, T.

AU - Heeney, M.

AU - Stingelin, N.

AU - Stafford, C. A.

AU - Beesley, D. J.

AU - Bernhard, C.

AU - Anthony, J. E.

AU - McKenzie, I.

AU - Lord, J. S.

AU - Drew, A. J.

PY - 2011/8/26

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N2 - Electron spin relaxation rate (eSR) is investigated on several organic semiconductors of different morphologies and molecular structures, using avoided level crossing muon spectroscopy as a local spin probe. We find that two functionalized acenes (polycrystalline tri(isopropyl)silyl-pentacene and amorphous 5,6,11,12-tetraphenyltetracene) exhibit eSRs with an Arrhenius-like temperature dependence, each with two characteristic energy scales similar to those expected from vibrations. Polycrystalline tris(8-hydroxyquinolate)gallium shows a similar behavior. The observed eSR for these molecules is no greater than 0.85 MHz at 300 K. The variety of crystal structures and transport regimes that these molecules possess, as well as the local nature of the probe, strongly suggest an intramolecular phenomenon general to many organic semiconductors, in contrast to the commonly assumed spin relaxation models based on intermolecular charge-carrier transport.

AB - Electron spin relaxation rate (eSR) is investigated on several organic semiconductors of different morphologies and molecular structures, using avoided level crossing muon spectroscopy as a local spin probe. We find that two functionalized acenes (polycrystalline tri(isopropyl)silyl-pentacene and amorphous 5,6,11,12-tetraphenyltetracene) exhibit eSRs with an Arrhenius-like temperature dependence, each with two characteristic energy scales similar to those expected from vibrations. Polycrystalline tris(8-hydroxyquinolate)gallium shows a similar behavior. The observed eSR for these molecules is no greater than 0.85 MHz at 300 K. The variety of crystal structures and transport regimes that these molecules possess, as well as the local nature of the probe, strongly suggest an intramolecular phenomenon general to many organic semiconductors, in contrast to the commonly assumed spin relaxation models based on intermolecular charge-carrier transport.

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Importance of intramolecular electron spin relaxation in small molecule semiconductors

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