Hydrogenation of Si from SiNx(H) films: Characterization of H introduced into the Si

Fan Jiang; Michael Stavola; A. Rohatgi; D. Kim; J. Holt; H. Atwater; J. Kalejs

doi:10.1063/1.1598643

Hydrogenation of Si from SiN_x(H) films: Characterization of H introduced into the Si

Fan Jiang, Michael Stavola, A. Rohatgi, D. Kim, J. Holt, H. Atwater, J. Kalejs

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70 Scopus citations

Abstract

A method to introduce H into multicrystalline Si solar cells in order to passivate bulk defects was presented. The infrared spectroscopy was used together with marker impurities in the Si to determine the concentration and depth of H introduced into Si from an annealed SiN_x film. It was reported that the H could be introduced by the postdeposition annealing of a H-rich, SiN_x surface layers.

Original language	English (US)
Pages (from-to)	931-933
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	5
DOIs	https://doi.org/10.1063/1.1598643
State	Published - Aug 4 2003
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "A method to introduce H into multicrystalline Si solar cells in order to passivate bulk defects was presented. The infrared spectroscopy was used together with marker impurities in the Si to determine the concentration and depth of H introduced into Si from an annealed SiNx film. It was reported that the H could be introduced by the postdeposition annealing of a H-rich, SiNx surface layers.",

author = "Fan Jiang and Michael Stavola and A. Rohatgi and D. Kim and J. Holt and H. Atwater and J. Kalejs",

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AU - Jiang, Fan

AU - Stavola, Michael

AU - Rohatgi, A.

AU - Kim, D.

AU - Holt, J.

AU - Atwater, H.

AU - Kalejs, J.

PY - 2003/8/4

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N2 - A method to introduce H into multicrystalline Si solar cells in order to passivate bulk defects was presented. The infrared spectroscopy was used together with marker impurities in the Si to determine the concentration and depth of H introduced into Si from an annealed SiNx film. It was reported that the H could be introduced by the postdeposition annealing of a H-rich, SiNx surface layers.

AB - A method to introduce H into multicrystalline Si solar cells in order to passivate bulk defects was presented. The infrared spectroscopy was used together with marker impurities in the Si to determine the concentration and depth of H introduced into Si from an annealed SiNx film. It was reported that the H could be introduced by the postdeposition annealing of a H-rich, SiNx surface layers.

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Hydrogenation of Si from SiN_x(H) films: Characterization of H introduced into the Si

Abstract

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