Hydrogenation of Si from SiN x:H films: How much hydrogen is really in the Si?

Michael Stavola; Fan Jiang; A. Rohatgi; D. Kim; J. Holt; H. Atwater; J. Kalejs

Hydrogenation of Si from SiN _x:H films: How much hydrogen is really in the Si?

Michael Stavola, Fan Jiang, A. Rohatgi, D. Kim, J. Holt, H. Atwater, J. Kalejs

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A promising method to introduce H into Si solar cells in order to passivate bulk defects is by the post-deposition annealing of an H-rich, SiN _x surface layer. It previously has been difficult to characterize the small concentration of H that is introduced by this method. IR spectroscopy has been used together with marker impurities in the Si to determine the concentration and depth of H introduced into Si from an annealed SiN _x film.

Original language	English (US)
Title of host publication	Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion
Editors	K. Kurokawa, L.L. Kazmerski, B. McNeils, M. Yamaguchi, C. Wronski
Pages	909-912
Number of pages	4
State	Published - 2003
Externally published	Yes
Event	Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion - Osaka, Japan Duration: May 11 2003 → May 18 2003

Publication series

Name	Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion
Volume	A

Conference

Conference	Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion
Country/Territory	Japan
City	Osaka
Period	5/11/03 → 5/18/03

ASJC Scopus subject areas

General Engineering

Cite this

Stavola, M., Jiang, F., Rohatgi, A., Kim, D., Holt, J., Atwater, H., & Kalejs, J. (2003). Hydrogenation of Si from SiN _x:H films: How much hydrogen is really in the Si? In K. Kurokawa, L. L. Kazmerski, B. McNeils, M. Yamaguchi, & C. Wronski (Eds.), Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion (pp. 909-912). (Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion; Vol. A).

Hydrogenation of Si from SiN _x:H films: How much hydrogen is really in the Si? / Stavola, Michael; Jiang, Fan; Rohatgi, A. et al.
Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion. ed. / K. Kurokawa; L.L. Kazmerski; B. McNeils; M. Yamaguchi; C. Wronski. 2003. p. 909-912 (Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion; Vol. A).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Stavola, M, Jiang, F, Rohatgi, A, Kim, D, Holt, J, Atwater, H & Kalejs, J 2003, Hydrogenation of Si from SiN _x:H films: How much hydrogen is really in the Si? in K Kurokawa, LL Kazmerski, B McNeils, M Yamaguchi & C Wronski (eds), Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion. Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion, vol. A, pp. 909-912, Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion, Osaka, Japan, 5/11/03.

Stavola M, Jiang F, Rohatgi A, Kim D, Holt J, Atwater H et al. Hydrogenation of Si from SiN _x:H films: How much hydrogen is really in the Si? In Kurokawa K, Kazmerski LL, McNeils B, Yamaguchi M, Wronski C, editors, Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion. 2003. p. 909-912. (Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion).

Stavola, Michael ; Jiang, Fan ; Rohatgi, A. et al. / Hydrogenation of Si from SiN _x:H films : How much hydrogen is really in the Si?. Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion. editor / K. Kurokawa ; L.L. Kazmerski ; B. McNeils ; M. Yamaguchi ; C. Wronski. 2003. pp. 909-912 (Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion).

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abstract = "A promising method to introduce H into Si solar cells in order to passivate bulk defects is by the post-deposition annealing of an H-rich, SiN x surface layer. It previously has been difficult to characterize the small concentration of H that is introduced by this method. IR spectroscopy has been used together with marker impurities in the Si to determine the concentration and depth of H introduced into Si from an annealed SiN x film.",

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