Hybridization-Induced Carrier Localization at the C60/ZnO Interface

Leah L. Kelly, David A. Racke, Hyungchul Kim, Paul Ndione, Ajaya K. Sigdel, Joseph J. Berry, Samuel Graham, Dennis Nordlund, Oliver L.A. Monti

Research output: Contribution to journalArticlepeer-review

12 Scopus citations


Electronic coupling and ground-state charge transfer at the C60/ZnO hybrid interface is shown to localize carriers in the C60 phase. This effect, revealed by resonant X-ray photoemission, arises from interfacial hybridization between C60 and ZnO. Such localization at carrier-selective electrodes and interlayers may lead to severely reduced carrier harvesting efficiencies and increased recombination rates in organic electronic devices.

Original languageEnglish (US)
Pages (from-to)3960-3965
Number of pages6
JournalAdvanced Materials
Issue number20
StatePublished - May 25 2016


  • charge transfer
  • hybrid organic/inorganic interfaces
  • hybridization
  • resonant photoemission spectroscopy
  • ultrafast carrier dynamics

ASJC Scopus subject areas

  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering


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