TY - JOUR
T1 - Hybrid Electrothermal Simulation of a 3-D Fin-Shaped Field-Effect Transistor Based on GaN Nanowires
AU - Hao, Qing
AU - Zhao, Hongbo
AU - Xiao, Yue
AU - Wang, Quan
AU - Wang, Xiaoliang
N1 - Funding Information:
Manuscript received November 22, 2017; accepted January 2, 2018. Date of publication February 9, 2018; date of current version February 22, 2018. This work was supported in part by the Defense Advanced Research Agency under Grant FA8650-15-1-7523 and in part by the National Science Foundation under Grant CBET-1651840. The review of this paper was arranged by Editor R. Venkatasubramanian. (Corresponding author: Yue Xiao.) Q. Hao, H. Zhao, and Y. Xiao are with the Department of Aerospace and Mechanical Engineering, The University of Arizona, Tucson, AZ 85721 USA (e-mail: [email protected]; [email protected]).
Publisher Copyright:
© 1963-2012 IEEE.
PY - 2018/3
Y1 - 2018/3
N2 - In recent years, 3-D GaN-based transistors have been intensively studied for their dramatically improved performance. However, thermal analysis of such devices is often oversimplified using the conventional Fourier's law in thermal simulations. In this aspect, accurate temperature predictions can be achieved by coupled phonon and electron Monte Carlo (MC) simulations that track the movement and scattering of individual phonons and electrons. Based on these MC simulations for the transistor region and the Fourier's law analysis for the rest of the chip, accurate electrothermal simulations are carried out on a nanowire-based GaN transistor to reveal the temperature rise in such devices.
AB - In recent years, 3-D GaN-based transistors have been intensively studied for their dramatically improved performance. However, thermal analysis of such devices is often oversimplified using the conventional Fourier's law in thermal simulations. In this aspect, accurate temperature predictions can be achieved by coupled phonon and electron Monte Carlo (MC) simulations that track the movement and scattering of individual phonons and electrons. Based on these MC simulations for the transistor region and the Fourier's law analysis for the rest of the chip, accurate electrothermal simulations are carried out on a nanowire-based GaN transistor to reveal the temperature rise in such devices.
KW - Coupled electron and phonon Monte Carlo (MC) simulation
KW - fin-shaped transistor
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U2 - 10.1109/TED.2018.2791959
DO - 10.1109/TED.2018.2791959
M3 - Article
AN - SCOPUS:85041855855
SN - 0018-9383
VL - 65
SP - 921
EP - 927
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 3
ER -