Hybrid DNA materials for energy storage

R. A. Norwood, J. Thomasa, N. Peyghambarian, J. Wang, L. Li, F. Ouchen, J. E. Grote

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Scopus citations


We investigate the dielectric and electrical properties of sol-gel/DNA-CTMA blends, with particular interest in capacitor applications in energy storage. Methacryloyloxypropyltrimethoxysilane (MAPTMS) was the solgel precursor, and DNA-CTMA was blended in to the resulting sol-gel at various weight percentages. The blends were tested for their dielectric properties and dielectric breakdown strength; the 5% DNA blend was found to be optimal with a dielectric constant in the range of 7.5, while the breakdown strength was greater than 800 V/μm for 1 μm films and about 500 V/μm for 5μm films. Hybrid sol-gel/DNA-CTMA/barium titanate nanoparticle composites were also formulated and their dielectric properties measured. While a high dielectric constant was achieved (38), this came at the expense of a significantly reduced breakdown voltage (160V/μm). We discuss these results as well as other aspects of the dielectric and electrical properties of these blends.

Original languageEnglish (US)
Title of host publicationNanobiosystems
Subtitle of host publicationProcessing, Characterization, and Applications III
StatePublished - 2010
EventNanobiosystems: Processing, Characterization, and Applications III - San Diego, CA, United States
Duration: Aug 4 2010Aug 5 2010

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


OtherNanobiosystems: Processing, Characterization, and Applications III
Country/TerritoryUnited States
CitySan Diego, CA


  • Capacitor
  • DNA
  • Dielectric breakdown
  • Energy storage
  • Nanoparticle composites
  • Polymer Blends
  • Sol-gel

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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