High-temperature operation of electrical injection type-II (GaIn)As/Ga(AsSb)/(GaIn)As "w"-quantum well lasers emitting at 1.3 μm

C. Fuchs, A. Brüggemann, M. J. Weseloh, C. Berger, C. Möller, S. Reinhard, J. Hader, J. V. Moloney, A. Bäumner, S. W. Koch, W. Stolz

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