High-speed integrated optoelectronic modulation circuit

Daniel Yap, Kenneth R. Elliott, Young K. Brown, Alan R. Kost, Elmira S. Ponti

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

A chip-level integrated optoelectronic modulation circuit is described for high-speed digital interconnects. This circuit is composed of an electroabsorption modulator with surface-normal operation at 1550-nm wavelengths and a high-speed electronic driver. A growth/etch/regrowth procedure is used to fabricate the multiple-quantum well modulators and the heterojunction bipolar transistors (HBTs) of the circuit on a common InP substrate. The measured bandwidth is approximately 30 GHz.

Original languageEnglish (US)
Pages (from-to)626-628
Number of pages3
JournalIEEE Photonics Technology Letters
Volume13
Issue number6
DOIs
StatePublished - Jun 2001
Externally publishedYes

Keywords

  • III-V semiconductors
  • Integrated optoelectronics
  • Optical communication equipment
  • Optical modulation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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