Abstract
A chip-level integrated optoelectronic modulation circuit is described for high-speed digital interconnects. This circuit is composed of an electroabsorption modulator with surface-normal operation at 1550-nm wavelengths and a high-speed electronic driver. A growth/etch/regrowth procedure is used to fabricate the multiple-quantum well modulators and the heterojunction bipolar transistors (HBTs) of the circuit on a common InP substrate. The measured bandwidth is approximately 30 GHz.
Original language | English (US) |
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Pages (from-to) | 626-628 |
Number of pages | 3 |
Journal | IEEE Photonics Technology Letters |
Volume | 13 |
Issue number | 6 |
DOIs | |
State | Published - Jun 2001 |
Externally published | Yes |
Keywords
- III-V semiconductors
- Integrated optoelectronics
- Optical communication equipment
- Optical modulation
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering