High-speed integrated optoelectronic modulation circuit

Daniel Yap; Kenneth R. Elliott; Young K. Brown; Alan R. Kost; Elmira S. Ponti

doi:10.1109/68.924047

High-speed integrated optoelectronic modulation circuit

Daniel Yap, Kenneth R. Elliott, Young K. Brown, Alan R. Kost, Elmira S. Ponti

Optical Sciences

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

A chip-level integrated optoelectronic modulation circuit is described for high-speed digital interconnects. This circuit is composed of an electroabsorption modulator with surface-normal operation at 1550-nm wavelengths and a high-speed electronic driver. A growth/etch/regrowth procedure is used to fabricate the multiple-quantum well modulators and the heterojunction bipolar transistors (HBTs) of the circuit on a common InP substrate. The measured bandwidth is approximately 30 GHz.

Original language	English (US)
Pages (from-to)	626-628
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	13
Issue number	6
DOIs	https://doi.org/10.1109/68.924047
State	Published - Jun 2001

Keywords

III-V semiconductors
Integrated optoelectronics
Optical communication equipment
Optical modulation

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/68.924047

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title = "High-speed integrated optoelectronic modulation circuit",

abstract = "A chip-level integrated optoelectronic modulation circuit is described for high-speed digital interconnects. This circuit is composed of an electroabsorption modulator with surface-normal operation at 1550-nm wavelengths and a high-speed electronic driver. A growth/etch/regrowth procedure is used to fabricate the multiple-quantum well modulators and the heterojunction bipolar transistors (HBTs) of the circuit on a common InP substrate. The measured bandwidth is approximately 30 GHz.",

keywords = "III-V semiconductors, Integrated optoelectronics, Optical communication equipment, Optical modulation",

author = "Daniel Yap and Elliott, {Kenneth R.} and Brown, {Young K.} and Kost, {Alan R.} and Ponti, {Elmira S.}",

year = "2001",

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volume = "13",

pages = "626--628",

journal = "IEEE Photonics Technology Letters",

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T1 - High-speed integrated optoelectronic modulation circuit

AU - Yap, Daniel

AU - Elliott, Kenneth R.

AU - Brown, Young K.

AU - Kost, Alan R.

AU - Ponti, Elmira S.

PY - 2001/6

Y1 - 2001/6

N2 - A chip-level integrated optoelectronic modulation circuit is described for high-speed digital interconnects. This circuit is composed of an electroabsorption modulator with surface-normal operation at 1550-nm wavelengths and a high-speed electronic driver. A growth/etch/regrowth procedure is used to fabricate the multiple-quantum well modulators and the heterojunction bipolar transistors (HBTs) of the circuit on a common InP substrate. The measured bandwidth is approximately 30 GHz.

AB - A chip-level integrated optoelectronic modulation circuit is described for high-speed digital interconnects. This circuit is composed of an electroabsorption modulator with surface-normal operation at 1550-nm wavelengths and a high-speed electronic driver. A growth/etch/regrowth procedure is used to fabricate the multiple-quantum well modulators and the heterojunction bipolar transistors (HBTs) of the circuit on a common InP substrate. The measured bandwidth is approximately 30 GHz.

KW - III-V semiconductors

KW - Integrated optoelectronics

KW - Optical communication equipment

KW - Optical modulation

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JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 6

ER -

High-speed integrated optoelectronic modulation circuit

Abstract

Keywords

ASJC Scopus subject areas

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