Abstract
Techniques are described to allow operation of discrete solid state detectors at 4 K with optimized junction field effect transistor (JFET) amplifiers. Three detector types cover the 0.6-4μpm spectral range with a noise equivalent power (NEP) of ∼10−16 Hz−1/2 for two of the types and potential improvement to this performance for the third. Lower NEPs can be anticipated at longer IR wavelengths.
Original language | English (US) |
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Pages (from-to) | 814-818 |
Number of pages | 5 |
Journal | Applied optics |
Volume | 20 |
Issue number | 5 |
DOIs | |
State | Published - Mar 1981 |
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Engineering (miscellaneous)
- Electrical and Electronic Engineering