High sensitivity operation of discrete solid state detectors at 4 K

G. H. Rieke; E. F. Montgomery; M. J. Lebofsky; P. R. Eisenhardt

doi:10.1364/AO.20.000814

High sensitivity operation of discrete solid state detectors at 4 K

G. H. Rieke, E. F. Montgomery, M. J. Lebofsky, P. R. Eisenhardt

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2 Scopus citations

Abstract

Techniques are described to allow operation of discrete solid state detectors at 4 K with optimized junction field effect transistor (JFET) amplifiers. Three detector types cover the 0.6-4μpm spectral range with a noise equivalent power (NEP) of ∼10⁻¹⁶ Hz^−1/2 for two of the types and potential improvement to this performance for the third. Lower NEPs can be anticipated at longer IR wavelengths.

Original language	English (US)
Pages (from-to)	814-818
Number of pages	5
Journal	Applied optics
Volume	20
Issue number	5
DOIs	https://doi.org/10.1364/AO.20.000814
State	Published - Mar 1981

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Engineering (miscellaneous)
Electrical and Electronic Engineering

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10.1364/AO.20.000814

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title = "High sensitivity operation of discrete solid state detectors at 4 K",

abstract = "Techniques are described to allow operation of discrete solid state detectors at 4 K with optimized junction field effect transistor (JFET) amplifiers. Three detector types cover the 0.6-4μpm spectral range with a noise equivalent power (NEP) of ∼10−16 Hz−1/2 for two of the types and potential improvement to this performance for the third. Lower NEPs can be anticipated at longer IR wavelengths.",

author = "Rieke, {G. H.} and Montgomery, {E. F.} and Lebofsky, {M. J.} and Eisenhardt, {P. R.}",

year = "1981",

month = mar,

doi = "10.1364/AO.20.000814",

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journal = "Applied Optics",

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T1 - High sensitivity operation of discrete solid state detectors at 4 K

AU - Rieke, G. H.

AU - Montgomery, E. F.

AU - Lebofsky, M. J.

AU - Eisenhardt, P. R.

PY - 1981/3

Y1 - 1981/3

N2 - Techniques are described to allow operation of discrete solid state detectors at 4 K with optimized junction field effect transistor (JFET) amplifiers. Three detector types cover the 0.6-4μpm spectral range with a noise equivalent power (NEP) of ∼10−16 Hz−1/2 for two of the types and potential improvement to this performance for the third. Lower NEPs can be anticipated at longer IR wavelengths.

AB - Techniques are described to allow operation of discrete solid state detectors at 4 K with optimized junction field effect transistor (JFET) amplifiers. Three detector types cover the 0.6-4μpm spectral range with a noise equivalent power (NEP) of ∼10−16 Hz−1/2 for two of the types and potential improvement to this performance for the third. Lower NEPs can be anticipated at longer IR wavelengths.

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High sensitivity operation of discrete solid state detectors at 4 K

Abstract

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