High resolution semiconductor inspection by using solid immersion lenses

Jun Zhang, Yullin Kim, Youngsik Kim, Roberto Valencia, Tom D. Milster, Dave Dozer

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


A near-field subsurface (100 μm) microscope with numerical aperture (NA) = 2:45 is developed for integrated circuit (IC) inspection by using silicon solid immersion lenses (SIL). It is optimized for imaging patterns underneath the surface (around 100 μm deep). With the illumination light at 1.2 μm, a lateral resolution of better than 300nm is experimentally demonstrated. Gap control and tilt servos are suggested for the possibility of dynamic imaging.

Original languageEnglish (US)
Article number03A043
JournalJapanese Journal of Applied Physics
Issue number3 PART 2
StatePublished - Mar 2009

ASJC Scopus subject areas

  • General Engineering
  • General Physics and Astronomy


Dive into the research topics of 'High resolution semiconductor inspection by using solid immersion lenses'. Together they form a unique fingerprint.

Cite this