Abstract
A high-power 650-nm GaInP/AlGaInP single-mode laser with 100 mW catastrophic optical damage (COD) power and 135 K characteristic temperature was developed. Present life-tests demonstrated more than 900 hours of life at 30 mW cw and 50 °C with little degradation. The 650-nm laser epitaxial structure consists of a GaInP/AlGaInP quantum well active region between n-AlInP and P-AlInP cladding layers. A heavily p-doped GaAs layer acted as the contact layer. Laser bars were cleaved and coated with low and high reflectivity at front and rear facets. Devices were bonded p-down on standard 9-mm window packages.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 336-337 |
| Number of pages | 2 |
| Journal | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS |
| Volume | 11 |
| State | Published - 1997 |
| Externally published | Yes |
| Event | Proceedings of the 1997 Conference on Lasers and Electro-Optics, CLEO - Baltimore, MD, USA Duration: May 18 1997 → May 23 1997 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering