High-reliability, high-temperature 30 mW single-mode laser diodes at 650 nm

Bo Lu, J. S. Osinski, T. Koch

Research output: Contribution to journalConference articlepeer-review


A high-power 650-nm GaInP/AlGaInP single-mode laser with 100 mW catastrophic optical damage (COD) power and 135 K characteristic temperature was developed. Present life-tests demonstrated more than 900 hours of life at 30 mW cw and 50 °C with little degradation. The 650-nm laser epitaxial structure consists of a GaInP/AlGaInP quantum well active region between n-AlInP and P-AlInP cladding layers. A heavily p-doped GaAs layer acted as the contact layer. Laser bars were cleaved and coated with low and high reflectivity at front and rear facets. Devices were bonded p-down on standard 9-mm window packages.

Original languageEnglish (US)
Pages (from-to)336-337
Number of pages2
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
StatePublished - 1997
EventProceedings of the 1997 Conference on Lasers and Electro-Optics, CLEO - Baltimore, MD, USA
Duration: May 18 1997May 23 1997

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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