High quality low-dose low-energy SIMOX implanted in high current oxygen implanter

M. J. Anc; M. Farley; J. Jiao; S. Seraphin; J. Kirchhoff; P. J. McMarr; H. L. Hughes

High quality low-dose low-energy SIMOX implanted in high current oxygen implanter

M. J. Anc, M. Farley, J. Jiao, S. Seraphin, J. Kirchhoff, P. J. McMarr, H. L. Hughes

Research output: Contribution to conference › Paper › peer-review

Abstract

Separation by implantation of oxygen (SIMOX) structures were formed with an ion energy of 65 keV in Ibis 1000 high current oxygen implanter. The Si substrate temperature was 500 °C and beam current was 40 mA during implantation. Doses in the range of 0.15×10¹⁸ to 0.7×10¹⁸ O⁺/cm² were implanted into the 〈100〉, p-type 10-20 Ohm-cm, 150 mm-diameter Si wafers. Implanted wafers were annealed at 1350 °C in Ar and the defect density of the Si layer was determined using the enhanced Secco etch technique and optical microscopy. The integrity of the buried oxide (BOX) was examined by measuring the current-voltage characteristics of the BOX capacitors.

Original language	English (US)
Pages	41-42
Number of pages	2
State	Published - 1998
Externally published	Yes
Event	Proceedings of the 1998 IEEE International SOI Conference - Stuart, FL, USA Duration: Oct 5 1998 → Oct 8 1998

Other

Other	Proceedings of the 1998 IEEE International SOI Conference
City	Stuart, FL, USA
Period	10/5/98 → 10/8/98

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

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title = "High quality low-dose low-energy SIMOX implanted in high current oxygen implanter",

abstract = "Separation by implantation of oxygen (SIMOX) structures were formed with an ion energy of 65 keV in Ibis 1000 high current oxygen implanter. The Si substrate temperature was 500 °C and beam current was 40 mA during implantation. Doses in the range of 0.15×1018 to 0.7×1018 O+/cm2 were implanted into the 〈100〉, p-type 10-20 Ohm-cm, 150 mm-diameter Si wafers. Implanted wafers were annealed at 1350 °C in Ar and the defect density of the Si layer was determined using the enhanced Secco etch technique and optical microscopy. The integrity of the buried oxide (BOX) was examined by measuring the current-voltage characteristics of the BOX capacitors.",

author = "Anc, {M. J.} and M. Farley and J. Jiao and S. Seraphin and J. Kirchhoff and McMarr, {P. J.} and Hughes, {H. L.}",

year = "1998",

language = "English (US)",

pages = "41--42",

note = "Proceedings of the 1998 IEEE International SOI Conference ; Conference date: 05-10-1998 Through 08-10-1998",

}

TY - CONF

T1 - High quality low-dose low-energy SIMOX implanted in high current oxygen implanter

AU - Anc, M. J.

AU - Farley, M.

AU - Jiao, J.

AU - Seraphin, S.

AU - Kirchhoff, J.

AU - McMarr, P. J.

AU - Hughes, H. L.

PY - 1998

Y1 - 1998

N2 - Separation by implantation of oxygen (SIMOX) structures were formed with an ion energy of 65 keV in Ibis 1000 high current oxygen implanter. The Si substrate temperature was 500 °C and beam current was 40 mA during implantation. Doses in the range of 0.15×1018 to 0.7×1018 O+/cm2 were implanted into the 〈100〉, p-type 10-20 Ohm-cm, 150 mm-diameter Si wafers. Implanted wafers were annealed at 1350 °C in Ar and the defect density of the Si layer was determined using the enhanced Secco etch technique and optical microscopy. The integrity of the buried oxide (BOX) was examined by measuring the current-voltage characteristics of the BOX capacitors.

AB - Separation by implantation of oxygen (SIMOX) structures were formed with an ion energy of 65 keV in Ibis 1000 high current oxygen implanter. The Si substrate temperature was 500 °C and beam current was 40 mA during implantation. Doses in the range of 0.15×1018 to 0.7×1018 O+/cm2 were implanted into the 〈100〉, p-type 10-20 Ohm-cm, 150 mm-diameter Si wafers. Implanted wafers were annealed at 1350 °C in Ar and the defect density of the Si layer was determined using the enhanced Secco etch technique and optical microscopy. The integrity of the buried oxide (BOX) was examined by measuring the current-voltage characteristics of the BOX capacitors.

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UR - http://www.scopus.com/inward/citedby.url?scp=0032314371&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0032314371

SP - 41

EP - 42

T2 - Proceedings of the 1998 IEEE International SOI Conference

Y2 - 5 October 1998 through 8 October 1998

ER -

High quality low-dose low-energy SIMOX implanted in high current oxygen implanter

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