High power tunable yellow laser using InGaAs/GaAs vertical external-cavity surface-emitting lasers

Mahmoud Fallahi; Chris Hessenius; Li Fan; Jörg Hader; Hongbo Li; Jerome V. Moloney; Wolfgang Stolz; Stephan W. Koch

doi:10.1109/ISLC.2008.4636063

High power tunable yellow laser using InGaAs/GaAs vertical external-cavity surface-emitting lasers

Mahmoud Fallahi, Chris Hessenius, Li Fan, Jörg Hader, Hongbo Li, Jerome V. Moloney, Wolfgang Stolz, Stephan W. Koch

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English (US)
Title of host publication	21st IEEE International Semiconductor Laser Conference, ISLC 2008
Pages	169-170
Number of pages	2
DOIs	https://doi.org/10.1109/ISLC.2008.4636063
State	Published - 2008
Event	21st IEEE International Semiconductor Laser Conference, ISLC 2008 - Sorrento, Italy Duration: Sep 14 2008 → Sep 18 2008

Publication series

Name	Conference Digest - IEEE International Semiconductor Laser Conference
ISSN (Print)	0899-9406

Other

Other	21st IEEE International Semiconductor Laser Conference, ISLC 2008
Country/Territory	Italy
City	Sorrento
Period	9/14/08 → 9/18/08

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Access to Document

10.1109/ISLC.2008.4636063

Cite this

Fallahi, M., Hessenius, C., Fan, L., Hader, J., Li, H., Moloney, J. V., Stolz, W., & Koch, S. W. (2008). High power tunable yellow laser using InGaAs/GaAs vertical external-cavity surface-emitting lasers. In 21st IEEE International Semiconductor Laser Conference, ISLC 2008 (pp. 169-170). Article 4636063 (Conference Digest - IEEE International Semiconductor Laser Conference). https://doi.org/10.1109/ISLC.2008.4636063

High power tunable yellow laser using InGaAs/GaAs vertical external-cavity surface-emitting lasers. / Fallahi, Mahmoud ; Hessenius, Chris; Fan, Li et al.
21st IEEE International Semiconductor Laser Conference, ISLC 2008. 2008. p. 169-170 4636063 (Conference Digest - IEEE International Semiconductor Laser Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Fallahi, M , Hessenius, C, Fan, L, Hader, J, Li, H, Moloney, JV, Stolz, W & Koch, SW 2008, High power tunable yellow laser using InGaAs/GaAs vertical external-cavity surface-emitting lasers. in 21st IEEE International Semiconductor Laser Conference, ISLC 2008., 4636063, Conference Digest - IEEE International Semiconductor Laser Conference, pp. 169-170, 21st IEEE International Semiconductor Laser Conference, ISLC 2008, Sorrento, Italy, 9/14/08. https://doi.org/10.1109/ISLC.2008.4636063

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title = "High power tunable yellow laser using InGaAs/GaAs vertical external-cavity surface-emitting lasers",

author = "Mahmoud Fallahi and Chris Hessenius and Li Fan and J{\"o}rg Hader and Hongbo Li and Moloney, {Jerome V.} and Wolfgang Stolz and Koch, {Stephan W.}",

year = "2008",

doi = "10.1109/ISLC.2008.4636063",

language = "English (US)",

isbn = "9781424417834",

series = "Conference Digest - IEEE International Semiconductor Laser Conference",

pages = "169--170",

booktitle = "21st IEEE International Semiconductor Laser Conference, ISLC 2008",

note = "21st IEEE International Semiconductor Laser Conference, ISLC 2008 ; Conference date: 14-09-2008 Through 18-09-2008",

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AU - Fallahi, Mahmoud

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AU - Fan, Li

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AU - Li, Hongbo

AU - Moloney, Jerome V.

AU - Stolz, Wolfgang

AU - Koch, Stephan W.

PY - 2008

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T3 - Conference Digest - IEEE International Semiconductor Laser Conference

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BT - 21st IEEE International Semiconductor Laser Conference, ISLC 2008

T2 - 21st IEEE International Semiconductor Laser Conference, ISLC 2008

Y2 - 14 September 2008 through 18 September 2008

ER -

High power tunable yellow laser using InGaAs/GaAs vertical external-cavity surface-emitting lasers

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Other

ASJC Scopus subject areas

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